najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2017-8-4-523-530najo-775Research ArticleCHEMISTRY AND MATERIALS SCIENCEХИМИЯ И НАУКА О МАТЕРИАЛАХThe XPS investigations of the surface composition of nanoscale films formed by thermal oxidation of VxOy/InP heterostructuresThe XPS investigations of the surface composition of nanoscale films formed by thermal oxidation of VxOy/InP heterostructuresSladkopevtcevB. V.SladkopevtcevB. V.

394018; Universitetskaya pl., 1; Voronezh

394018; Universitetskaya pl., 1; Voronezh

dp-kmins@yandex.ruZolotukhinaE. V.ZolotukhinaE. V.

142432; Semenov avenue, 1; Chernogolovka

142432; Semenov avenue, 1; Chernogolovka

TominaE. V.TominaE. V.

394018; Universitetskaya pl., 1; Voronezh

394018; Universitetskaya pl., 1; Voronezh

MittovaI. Ya.MittovaI. Ya.

394018; Universitetskaya pl., 1; Voronezh

394018; Universitetskaya pl., 1; Voronezh

Voronezh State UniversityVoronezh State UniversityInstitute of Problems of Chemical Physics of RASInstitute of Problems of Chemical Physics of RAS20171308202584523530Copyright © Sladkopevtcev B.V., Zolotukhina E.V., Tomina E.V., Mittova I.Y., 20252025Sladkopevtcev B.V., Zolotukhina E.V., Tomina E.V., Mittova I.Y.Sladkopevtcev B.V., Zolotukhina E.V., Tomina E.V., Mittova I.Y.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/775

   The dependence of oxide films surface layers’ compositions on the method of depositing of V2O5 on InP and regimes of thermal oxidation of the formed heterostructures was established by the XPS method. Lower indium content near the surface for all samples in comparison with the standard indicates a partial blocking of its diffusion into films during the chemostimulated thermal oxidation of the semiconductor. The presence of vanadium oxides in certain oxidation states and their ratio depends on the method of deposition for the chemostimulator, and on the regime of thermal oxidation. In the case of the electric arc synthesis method, at shorter reaction times, vanadium compounds in the +4 and +5 oxidation states were present in the near-surface layer, which gives evidence for the catalytic mechanism.

   The dependence of oxide films surface layers’ compositions on the method of depositing of V2O5 on InP and regimes of thermal oxidation of the formed heterostructures was established by the XPS method. Lower indium content near the surface for all samples in comparison with the standard indicates a partial blocking of its diffusion into films during the chemostimulated thermal oxidation of the semiconductor. The presence of vanadium oxides in certain oxidation states and their ratio depends on the method of deposition for the chemostimulator, and on the regime of thermal oxidation. In the case of the electric arc synthesis method, at shorter reaction times, vanadium compounds in the +4 and +5 oxidation states were present in the near-surface layer, which gives evidence for the catalytic mechanism.

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The authors declare that there are no conflicts of interest present.