najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2017-8-1-75-78najo-784Research ArticlePHYSICSФИЗИКАSimulation of DIBL effect in junctionless SOI MOSFETs with extended gateAtamuratovA. E.

14, Urganch, 220100

atabek.atamuratov@yahoo.comKhalilloevM.

14, Urganch, 220100

AbdikarimovA.

14, Urganch, 220100

AtamuratovaZ. A.

14, Urganch, 220100

KittlerM.

Ehrenbergstrasse, 29, 98693 Ilmenau

GranznerR.

Ehrenbergstrasse, 29, 98693 Ilmenau

SchwierzF.

Ehrenbergstrasse, 29, 98693 Ilmenau

frank.schwierz@tu-ilmenau.deUrganch State University, Kh. OlimjanUzbekistanTechnical University of IlmenauGermany201713082025817578Copyright © Atamuratov A.E., Khalilloev M., Abdikarimov A., Atamuratova Z.A., Kittler M., Granzner R., Schwierz F., 20252025Atamuratov A.E., Khalilloev M., Abdikarimov A., Atamuratova Z.A., Kittler M., Granzner R., Schwierz F.Atamuratov A.E., Khalilloev M., Abdikarimov A., Atamuratova Z.A., Kittler M., Granzner R., Schwierz F.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/784

Short channel effects such as DIBL are compared for trigate SOI Junctionless MOSFET with extended and non-extended lateral part of the gate. A trigate SOI JLMOSFET with gate length Lgate, a silicon body width Wtin and thickness of 10 nm are simulated. In order to calculate the DIBL, the transfer characteristics of JLMOSFETs was simulated at a donor concentration of 5⋅1019 cm-3 in the silicon body. The equivalent oxide thicknesses of the HfO2 gate insulator used in simulation was 0.55 nm. Simulation result showed the DIBL for the trigate JLMOSFET depended on the length of the lateral part of the gate Lext. DIBL is high for devices with gates having extended lateral parts. This is a result of parasitic source (drain)-gate capacitance coupling which is higher for longer Lext.

Junctionless MOSFETDIBLparasitic capacitanceReferencesPark J.-T., Colinge J.-P., Diaz C.H. Pi-Gate SOI MOSFET. IEEE Electron Device Letters, 2001, 22 (8), P. 405–406.Park J.-T., Colinge J.-P., Diaz C.H. Pi-Gate SOI MOSFET. IEEE Electron Device Letters, 2001, 22 (8), P. 405–406.Lee C.-W., et al. Performance estimation of Junctionless multigate transistors. Solid-State Electronics, 2009, 54, P. 97–103.Lee C.-W., et al. Performance estimation of Junctionless multigate transistors. Solid-State Electronics, 2009, 54, P. 97–103.Colinge J.-P. Conduction mechanisms in thin-film, accumulation-mode p-channel SOI MOSFETs. IEEE Trans. Electron Devices, 1990, 37, P. 718.Colinge J.-P. Conduction mechanisms in thin-film, accumulation-mode p-channel SOI MOSFETs. IEEE Trans. Electron Devices, 1990, 37, P. 718.Abdikarimov A., Indalecio G., et al. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET. Proceeding of the 17th International Workshop on Computational Electronics (IWCE-17), Paris, France, 3–6 June 2014, P. 247–248.Abdikarimov A., Indalecio G., et al. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET. Proceeding of the 17th International Workshop on Computational Electronics (IWCE-17), Paris, France, 3–6 June 2014, P. 247–248.Veeraraghavan S., Fossum J.G. Short-channel effects in SOIMOSFETs. IEEE Transactions on Electron Devices, 1989, 36 (3), P. 522–528.Veeraraghavan S., Fossum J.G. Short-channel effects in SOIMOSFETs. IEEE Transactions on Electron Devices, 1989, 36 (3), P. 522–528.Atamuratov A.E., Aminov U.A., et al. The lateral capacitance of nanometer MNOSFET with a single charge trapped in oxide layer or at SiO2– SI3N4 interface. Nanosystems: Physics, Chemistry, Mathematics, 2015, 6 (6), P. 837–842.Atamuratov A.E., Aminov U.A., et al. The lateral capacitance of nanometer MNOSFET with a single charge trapped in oxide layer or at SiO2– SI3N4 interface. Nanosystems: Physics, Chemistry, Mathematics, 2015, 6 (6), P. 837–842.Ferain I., Colinge C.A., Colinge J.-P. Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors. Nature, 2011, 479, P. 310–316.Ferain I., Colinge C.A., Colinge J.-P. Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors. Nature, 2011, 479, P. 310–316.URL: http://www.synopsys.com.URL: http://www.synopsys.com.Bueno-Barrachina J.M., Ca˜ nas-Pe˜ nuelas C.S., Catalan-Izquierdo S. Capacitance Evaluation on Non-parallel Thick-Plate Capacitors by Means of Finite Element Analysis. Journal of Energy and Power Engineering, 2011, 5, P. 373–378Bueno-Barrachina J.M., Ca˜ nas-Pe˜ nuelas C.S., Catalan-Izquierdo S. Capacitance Evaluation on Non-parallel Thick-Plate Capacitors by Means of Finite Element Analysis. Journal of Energy and Power Engineering, 2011, 5, P. 373–378

The authors declare that there are no conflicts of interest present.