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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">najo</journal-id><journal-title-group><journal-title xml:lang="en">Nanosystems: Physics, Chemistry, Mathematics</journal-title><trans-title-group xml:lang="ru"><trans-title>Наносистемы: физика, химия, математика</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2220-8054</issn><issn pub-type="epub">2305-7971</issn><publisher><publisher-name>Университет ИТМО</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17586/2220-8054-2016-7-1-81-86</article-id><article-id custom-type="elpub" pub-id-type="custom">najo-799</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>PAPERS, PRESENTED AT THE CONFERENCE</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>PAPERS, PRESENTED AT THE CONFERENCE</subject></subj-group></article-categories><title-group><article-title>Etching of wrinkled graphene oxide films in noble gas atmosphere under UV irradiation</article-title><trans-title-group xml:lang="ru"><trans-title>Etching of wrinkled graphene oxide films in noble gas atmosphere under UV irradiation</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Aleksenskii</surname><given-names>А. E.</given-names></name><name name-style="western" xml:lang="en"><surname>Aleksenskii</surname><given-names>A. E.</given-names></name></name-alternatives><bio xml:lang="ru"><p>St. Petersburg</p></bio><bio xml:lang="en"><p>St. Petersburg</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Vul’</surname><given-names>S. P.</given-names></name><name name-style="western" xml:lang="en"><surname>Vul’</surname><given-names>S. P.</given-names></name></name-alternatives><bio xml:lang="ru"><p>St. Petersburg</p></bio><bio xml:lang="en"><p>St. Petersburg</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Dideikin</surname><given-names>A. T.</given-names></name><name name-style="western" xml:lang="en"><surname>Dideikin</surname><given-names>A. T.</given-names></name></name-alternatives><bio xml:lang="ru"><p>St. Petersburg</p></bio><bio xml:lang="en"><p>St. Petersburg</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Sakharov</surname><given-names>V. I.</given-names></name><name name-style="western" xml:lang="en"><surname>Sakharov</surname><given-names>V. I.</given-names></name></name-alternatives><bio xml:lang="ru"><p>St. Petersburg</p></bio><bio xml:lang="en"><p>St. Petersburg</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Serenkov</surname><given-names>I. T.</given-names></name><name name-style="western" xml:lang="en"><surname>Serenkov</surname><given-names>I. T.</given-names></name></name-alternatives><bio xml:lang="ru"><p>St. Petersburg</p></bio><bio xml:lang="en"><p>St. Petersburg</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Rabchinskii</surname><given-names>M. K.</given-names></name><name name-style="western" xml:lang="en"><surname>Rabchinskii</surname><given-names>M. K.</given-names></name></name-alternatives><bio xml:lang="ru"><p>St. Petersburg</p></bio><bio xml:lang="en"><p>St. Petersburg</p></bio><email xlink:type="simple">Maxrabchinskii@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Afrosimov</surname><given-names>V. V.</given-names></name><name name-style="western" xml:lang="en"><surname>Afrosimov</surname><given-names>V. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>St. Petersburg</p></bio><bio xml:lang="en"><p>St. Petersburg</p></bio><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Ioffe Institute</institution></aff><aff xml:lang="en"><institution>Ioffe Institute</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2016</year></pub-date><pub-date pub-type="epub"><day>14</day><month>08</month><year>2025</year></pub-date><volume>7</volume><issue>1</issue><issue-title>Special Issue: Proceedings of the 12th Biennial International Conference “Advanced Carbon Nanostructures” (ACNS’2015)</issue-title><fpage>81</fpage><lpage>86</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Aleksenskii A.E., Vul’ S.P., Dideikin A.T., Sakharov V.I., Serenkov I.T., Rabchinskii M.K., Afrosimov V.V., 2025</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="ru">Aleksenskii А.E., Vul’ S.P., Dideikin A.T., Sakharov V.I., Serenkov I.T., Rabchinskii M.K., Afrosimov V.V.</copyright-holder><copyright-holder xml:lang="en">Aleksenskii A.E., Vul’ S.P., Dideikin A.T., Sakharov V.I., Serenkov I.T., Rabchinskii M.K., Afrosimov V.V.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://nanojournal.ifmo.ru/jour/article/view/799">https://nanojournal.ifmo.ru/jour/article/view/799</self-uri><abstract><p>We have studied the process of UV reduction of wrinkled grahpene oxide films, deposited on silicon substrate from ethanol suspension. In order to avoid destruction of graphene oxide via ozone formation from ambient air, samples were protected by argon atmosphere during UV irradiation. Using the analysis of back scattering spectra for medium energy ions, we have found that the UV irradiation mediated reduction process produced significantly decreased carbon content on the substrate surface. The decrease in the carbon content was accompanied by a smoothing of the films during reduction to graphene. We suppose that the observed effect is related to the oxidation of carbon atoms in the graphene scaffold of graphene oxide to carbon monoxide or dioxide by the oxygen from the graphene oxide (GO) itself. One has to consider this when developing a process for the preparation of graphene films using the UV-mediated reduction of graphene oxide.</p></abstract><trans-abstract xml:lang="ru"><p>We have studied the process of UV reduction of wrinkled grahpene oxide films, deposited on silicon substrate from ethanol suspension. In order to avoid destruction of graphene oxide via ozone formation from ambient air, samples were protected by argon atmosphere during UV irradiation. Using the analysis of back scattering spectra for medium energy ions, we have found that the UV irradiation mediated reduction process produced significantly decreased carbon content on the substrate surface. The decrease in the carbon content was accompanied by a smoothing of the films during reduction to graphene. We suppose that the observed effect is related to the oxidation of carbon atoms in the graphene scaffold of graphene oxide to carbon monoxide or dioxide by the oxygen from the graphene oxide (GO) itself. One has to consider this when developing a process for the preparation of graphene films using the UV-mediated reduction of graphene oxide.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>graphene oxide</kwd><kwd>reduction</kwd><kwd>UV irradiation</kwd><kwd>graphene films</kwd></kwd-group><kwd-group xml:lang="en"><kwd>graphene oxide</kwd><kwd>reduction</kwd><kwd>UV irradiation</kwd><kwd>graphene films</kwd></kwd-group><funding-group><funding-statement xml:lang="en">M.K. Rabchinsky and A.T. Dideikin are grateful to RFBR (grant No. 15-02-05153) for financial support.</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Huang X., Yin Z., et al. Graphene-Based Materials: Synthesis, Characterization, Properties, and Applications. Small, 2011, 7 (14), P. 1876–1902.</mixed-citation><mixed-citation xml:lang="en">Huang X., Yin Z., et al. 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