najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2025-16-1-44-50najo-83Research ArticleCHEMISTRY AND MATERIALS SCIENCEХИМИЯ И НАУКА О МАТЕРИАЛАХSynthesis and characterization of InGaZn2O5 obtained by nitrate-tartrate complex decomposition methodСинтез и характеризация InGaZn2O5 полученного методом разложения нитратно-тартратного комплексаhttps://orcid.org/0009-0003-3438-5893БолейкоГ. М.BoleikoG. M.

Gelena M. Boleiko

9, Dolgoprudny, 141701

boleiko.gm@mipt.ruhttps://orcid.org/0009-0008-4546-1368ЗирникГ. М.ZirnikG. M.

Gleb M. Zirnik

9, Dolgoprudny, 141701

glebanaz@mail.ruhttps://orcid.org/0009-0003-4773-1687КовалёвА. И.KovalevA. I.

Andrey I. Kovalev

9, Dolgoprudny, 141701

Lenin Av., 76, Chelyabinsk, 454080

asp23kai165@susu.ruhttps://orcid.org/0000-0002-8623-4769УчаевД. А.UchaevD. A.

Daniil A. Uchaev

Lenin Av., 76, Chelyabinsk, 454080

uchaevda@susu.ac.ruhttps://orcid.org/0000-0001-6973-4633СолизодаИ. А.SolizodaI. A.

Ibrohimi A. Solizoda

9, Dolgoprudny, 141701

Universitetskaya embankment, 7-9, 199034, St. Petersburg

Rudaki Av., 17, Dushanbe, 734025

solizoda.ia@mipt.ruhttps://orcid.org/0000-0002-1272-1628ЧернухаА. С.ChernukhaA. S.

Alexander S. Chernukha

Institutsky lane, 9, Dolgoprudny, 141701

Lenin Av., 76, Chelyabinsk, 454080

https://orcid.org/0000-0002-3028-947XГудковаС. А.GudkovaS. A.

Svetlana A. Gudkova

Institutsky lane, 9, Dolgoprudny, 141701

Universitetskaya embankment, 7-9, 199034, St. Petersburg

svetlanagudkova@yandex.ruhttps://orcid.org/0000-0002-5190-9834ВинникД. А.VinnikD. A.

Denis A. Vinnik

Institutsky lane, 9, Dolgoprudny, 141701

Lenin Av., 76, Chelyabinsk, 454080

Universitetskaya embankment, 7-9, 199034, St. Petersburg

vinnik.da@mipt.ruMoscow Institute of Physics and Technology Institutsky laneRussian FederationMoscow Institute of Physics and Technology Institutsky lane; South Ural State UniversityRussian FederationSouth Ural State UniversityRussian FederationMoscow Institute of Physics and Technology Institutsky lane; St. Petersburg State University Universitetskaya embankment; Tajik National UniversityRussian FederationMoscow Institute of Physics and Technology; South Ural State UniversityRussian FederationMoscow Institute of Physics and Technology; St. Petersburg State UniversityRussian FederationMoscow Institute of Physics and Technology; South Ural State University; St. Petersburg State UniversityRussian Federation2025010620251614450Copyright © Boleiko G.M., Zirnik G.M., Kovalev A.I., Uchaev D.A., Solizoda I.A., Chernukha A.S., Gudkova S.A., Vinnik D.A., 20252025Болейко Г.М., Зирник Г.М., Ковалёв А.И., Учаев Д.А., Солизода И.А., Чернуха А.С., Гудкова С.А., Винник Д.А.Boleiko G.M., Zirnik G.M., Kovalev A.I., Uchaev D.A., Solizoda I.A., Chernukha A.S., Gudkova S.A., Vinnik D.A.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/83

The study for the first time presents a method for producing indium-gallium-zinc oxide InGaZn2O5 using the nitrate-tartrate complex decomposition method. The material is characterized by X-ray diffraction, electron microscopy, IR- and UV-spectroscopy. It has been established that the use of tartaric acid as a precursor already at a temperature of 500 C leads to the formation of a single-phase homogeneous material consisting of nanocrystalline particles in the form of micrometer agglomerates. The proposed method for producing nanoparticles can be used in the future to produce semiconductor inks based on IGZO. KEYWORDS indium-gallium-zinc oxide, InGaZn2O5, IGZO, nanoparticles.

В работе впервые представлен способ получения оксида индия-галлия-цинка методом разложения нитратно-тартратного комплекса. Материал охарактеризован методами рентгеновской дифракции, электронной микроскопии, ИК- и УФ-спектроскопии. Установлено, что использование в качестве прекурсора винной кислоты уже при температуре 500 °С приводит к образованию однофазного однородного материала, состоящего из нанокристаллических частиц в виде микрометровых агломератов. Предложенный способ получения наночастиц может быть в дальнейшем использован для получения полупроводниковых чернил на основе IGZO.

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The authors declare that there are no conflicts of interest present.