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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">najo</journal-id><journal-title-group><journal-title xml:lang="en">Nanosystems: Physics, Chemistry, Mathematics</journal-title><trans-title-group xml:lang="ru"><trans-title>Наносистемы: физика, химия, математика</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2220-8054</issn><issn pub-type="epub">2305-7971</issn><publisher><publisher-name>Университет ИТМО</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17586/2220-8054-2019-10-6-720-724</article-id><article-id custom-type="elpub" pub-id-type="custom">najo-851</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>CHEMISTRY AND MATERIALS SCIENCE</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ХИМИЯ И НАУКА О МАТЕРИАЛАХ</subject></subj-group></article-categories><title-group><article-title>Methodology of analyzing the InSb semiconductor quantum dots parameters</article-title><trans-title-group xml:lang="ru"><trans-title>Methodology of analyzing the InSb semiconductor quantum dots parameters</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Mikhailov</surname><given-names>А. I.</given-names></name><name name-style="western" xml:lang="en"><surname>Mikhailov</surname><given-names>A. I.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Department of Nanoand Biomedical Technologies</p><p>Astrakhanskaya, 83, Saratov, 410012</p></bio><bio xml:lang="en"><p>Department of Nanoand Biomedical Technologies</p><p>Astrakhanskaya, 83, Saratov, 410012</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Kabanov</surname><given-names>V. F.</given-names></name><name name-style="western" xml:lang="en"><surname>Kabanov</surname><given-names>V. F.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Department of Nanoand Biomedical Technologies</p><p>Astrakhanskaya, 83, Saratov, 410012</p></bio><bio xml:lang="en"><p>Department of Nanoand Biomedical Technologies</p><p>Astrakhanskaya, 83, Saratov, 410012</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Gavrikov</surname><given-names>М. V.</given-names></name><name name-style="western" xml:lang="en"><surname>Gavrikov</surname><given-names>M. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Department of Nanoand Biomedical Technologies</p><p>Astrakhanskaya, 83, Saratov, 410012</p></bio><bio xml:lang="en"><p>Department of Nanoand Biomedical Technologies</p><p>Astrakhanskaya, 83, Saratov, 410012</p></bio><email xlink:type="simple">maks.gavrikov.96@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru">Saratov State University<country>Россия</country></aff><aff xml:lang="en">Saratov State University<country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2019</year></pub-date><pub-date pub-type="epub"><day>13</day><month>08</month><year>2025</year></pub-date><volume>10</volume><issue>6</issue><fpage>720</fpage><lpage>724</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Mikhailov A.I., Kabanov V.F., Gavrikov M.V., 2025</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="ru">Mikhailov А.I., Kabanov V.F., Gavrikov М.V.</copyright-holder><copyright-holder xml:lang="en">Mikhailov A.I., Kabanov V.F., Gavrikov M.V.</copyright-holder><license license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://nanojournal.ifmo.ru/jour/article/view/851">https://nanojournal.ifmo.ru/jour/article/view/851</self-uri><abstract><p>The investigation of indium antimonide quantum dots has been carried out by the methods of differential normalized tunnel current-voltage characteristics, electron microscopy, particle size analysis and spectral dependence of the absorption coefficient. Qualitatively and quantitatively consistent measurement results were obtained with an error less than 15 %. It is concluded that the analysis of normalized differential tunnel current-voltage characteristics is an effective method of express-analysis that can be used in investigation of quantum-sized objects properties.</p></abstract><trans-abstract xml:lang="ru"><p>The investigation of indium antimonide quantum dots has been carried out by the methods of differential normalized tunnel current-voltage characteristics, electron microscopy, particle size analysis and spectral dependence of the absorption coefficient. Qualitatively and quantitatively consistent measurement results were obtained with an error less than 15 %. It is concluded that the analysis of normalized differential tunnel current-voltage characteristics is an effective method of express-analysis that can be used in investigation of quantum-sized objects properties.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>quantum dots</kwd><kwd>indium antimonide</kwd><kwd>differential tunnel current-voltage characteristics</kwd><kwd>energy spectrum</kwd></kwd-group><kwd-group xml:lang="en"><kwd>quantum dots</kwd><kwd>indium antimonide</kwd><kwd>differential tunnel current-voltage characteristics</kwd><kwd>energy spectrum</kwd></kwd-group><funding-group xml:lang="en"><funding-statement>This work was supported by grants from the Russian Foundation for Basic Research Projects No. 19-07-00087 and No. 19-07-00086</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Reiss P., Carriere M., et al. 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