najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2018-9-6-789-792najo-863Research ArticleCHEMISTRY AND MATERIALS SCIENCEХИМИЯ И НАУКА О МАТЕРИАЛАХAnnealing atmosphere influence on contact resistivity of ohmic Pd/Ge/Au contact to n-GaAsMitinD. M.

Politekhnicheskaya, 26, St. Petersburg, 194021

mitindm@mail.ruSoldatenkovF. Yu.

Politekhnicheskaya, 26, St. Petersburg, 194021

f.soldatenkov@mail.ioffe.ruMozharovA. M.

Khlopina, 8, building 3, lit. A, St. Petersburg, 194021

mozharov@spbau.ruVasil’evA. A.

Khlopina, 8, building 3, lit. A, St. Petersburg, 194021

ftf.vasiliev@yandex.ruNeplokhV. V.

Khlopina, 8, building 3, lit. A, St. Petersburg, 194021

vneplokh@spbau.ruMukhinI. S.

Khlopina, 8, building 3, lit. A, St. Petersburg, 194021

Kronverkskiy, 49, St. Petersburg, 197101

imukhin@yandex.ruIoffe Physical Technical Institute of the Russian Academy of SciencesRussian FederationSaint Petersburg National Research Academic University of the Russian Academy of SciencesRussian FederationSaint Petersburg National Research Academic University of the Russian Academy of Sciences; Saint Petersburg National Research University of Information Technologies, Mechanics and OpticsRussian Federation20181408202596789–792Copyright © Mitin D.M., Soldatenkov F.Y., Mozharov A.M., Vasil’ev A.A., Neplokh V.V., Mukhin I.S., 20252025Mitin D.M., Soldatenkov F.Y., Mozharov A.M., Vasil’ev A.A., Neplokh V.V., Mukhin I.S.Mitin D.M., Soldatenkov F.Y., Mozharov A.M., Vasil’ev A.A., Neplokh V.V., Mukhin I.S.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/863

We report the results of research for the Pd/Ge/Au ohmic contact resistivity to n-GaAs thermally treated in various gas atmospheres at low temperature. The lowest contact resistivity of about 4 · 10−6 Ω·cm2 was obtained with annealing under a hydrogen atmosphere. The mechanism of the ohmic contact formation upon annealing under a hydrogen atmosphere has been proposed. The achieved results can be used for development of multi-junction solar cells, power semiconductor devices, lasers, and nanowire-based structures sensible to a high temperature treatment.

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The authors declare that there are no conflicts of interest present.