najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМОnajo-879Research ArticleFULLERENSFULLERENSSimulation of secondary electron transport in thin metal and fullerite filmsPetrenkoE. O.

Nauky av., 47, Kiev

ievgeniip@gmail.comMakaretsM. V.

Phys. Dep. Akad. Glushkov av. 4, Kiev, 03022

MikoushkinV. M.

194021, St. Petersburg

PugachV. M.

Nauky av., 47, Kiev

Kiev institute for Nuclear research NAS of UkraineUkraineTaras Shevchenko National University of KyivUkraineIoffe InstituteUkraine201415082025518185Copyright © Petrenko E.O., Makarets M.V., Mikoushkin V.M., Pugach V.M., 20252025Petrenko E.O., Makarets M.V., Mikoushkin V.M., Pugach V.M.Petrenko E.O., Makarets M.V., Mikoushkin V.M., Pugach V.M.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/879

Excitation processes and transport of recoiled and secondary electrons generated in fullerite and metal films under photons and electron irradiation were studied by computer simulation. Studied processes resulting in polymerization of fullerite were considered as the basic ones in formation of a pixel in electron nanolithography with fullerite film as an electron-beam resist. Reliability of the computer model and the important role of secondary electrons in the process of pixel formation were confirmed by comparison of the sizes of the calculated secondary electron swarm and the experimental cluster-pixel obtained previously. The photoelectron yield dependence on the incident photon’s energy was also obtained with the same computer model for metal foils which can be used as a radiation strip-detector.

FulleriteFilmsElectron beamsElectronic propertiesReferencesMakarets M.V., Petrenko E.O., Pugatch V.M. Accumulation of charge on metal strip detector under ion beam: experiment and simulation. J. Nuclear Physics and Atomic Energy, 13, P. 146–152 (2012).Makarets M.V., Petrenko E.O., Pugatch V.M. Accumulation of charge on metal strip detector under ion beam: experiment and simulation. J. Nuclear Physics and Atomic Energy, 13, P. 146–152 (2012).Mikoushkin V.M., Shnitov V.V. Electron beam-induced fullerite structure transformation, Phys. Solid State, 39 (1), P. 164–167 (1997).Mikoushkin V.M., Shnitov V.V. Electron beam-induced fullerite structure transformation, Phys. Solid State, 39 (1), P. 164–167 (1997).Snitov V.V., Mikoushkin V.M., Gordeev Yu.S. Fullerite C60 as electron-beam resist for ”dry” nanolithography. Microelectron. Engin., 69 (2–4), P. 429–435 (2003).Snitov V.V., Mikoushkin V.M., Gordeev Yu.S. Fullerite C60 as electron-beam resist for ”dry” nanolithography. Microelectron. Engin., 69 (2–4), P. 429–435 (2003).Makarets N.V., Prylutskyy Yu.I., et al. Simulation of fullerite C60 polimerisation under particle beams irradiation. Mol. Cryst. & Liquid Cryst., 426, P. 171–178 (2005).Makarets N.V., Prylutskyy Yu.I., et al. Simulation of fullerite C60 polimerisation under particle beams irradiation. Mol. Cryst. & Liquid Cryst., 426, P. 171–178 (2005).Petrenko E.O., Makarets N.V., Mikoushkin V.M. Simulation of fast electron transport in thin fullerite C60 films. Fullerenes, Nanotubes and Carbon Nanostructures, 20 (4–7), P. 378–381 (2012).Petrenko E.O., Makarets N.V., Mikoushkin V.M. Simulation of fast electron transport in thin fullerite C60 films. Fullerenes, Nanotubes and Carbon Nanostructures, 20 (4–7), P. 378–381 (2012).Nevedomsky V.N., Mikoushkin V.M., et al. The role of secondury electrons in forming the image of electron nanoprobe. Fullerenes, Nanotubes and Carbon nanostructures, 16 (5–6), P. 682–686 (2008).Nevedomsky V.N., Mikoushkin V.M., et al. The role of secondury electrons in forming the image of electron nanoprobe. Fullerenes, Nanotubes and Carbon nanostructures, 16 (5–6), P. 682–686 (2008).Penn D. Electron mean-free-paths calculation using a model dielectric function. Phys. Rev. B, 35, P. 482–486 (1987).Penn D. Electron mean-free-paths calculation using a model dielectric function. Phys. Rev. B, 35, P. 482–486 (1987).Thomas C., Rehm G. Short Report on New XBPM tested on B16. Doc No: TDI-DIA-OPT-0011, July 1, 2011.Thomas C., Rehm G. Short Report on New XBPM tested on B16. Doc No: TDI-DIA-OPT-0011, July 1, 2011.

The authors declare that there are no conflicts of interest present.