najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМОnajo-893Research ArticleCHEMISTRY AND MATERIALS SCIENCEХИМИЯ И НАУКА О МАТЕРИАЛАХEffect of the mild method of formation VxOy/InP structures using V2O5 gel on the process of their oxidation and composition of nanosized oxide filmsMittovaI. A.

Voronezh

inorg@chem.vsu.ruTominaE. V.

Voronezh

SladkopevtcevB. V.

Voronezh

Voronezh State UniversityRussian Federation20141408202552307–314Copyright © Mittova I.A., Tomina E.V., Sladkopevtcev B.V., 20252025Mittova I.A., Tomina E.V., Sladkopevtcev B.V.Mittova I.A., Tomina E.V., Sladkopevtcev B.V.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/893

A VxOy/InP structure was formed by the deposition of a V2O5 gel aerosol on an InP surface, followed by thermal annealing. This approach avoids chemostimulator interactions with the substrate prior to thermal oxidation, which is characteristic of ‘hard’ methods of chemostimulator deposition. The oxidation process of such structures occurs in the transit mechanism with a slight increase growth rate of films by 20–40 % in comparison with the oxidation of InP. The transit action of chemostimulator has been associated with the chemical bonding of V2O5 into InVO4 (XRD), which predominates over mutual transformations of vanadium oxide, which forms in different oxidation states.

indium phosphidechemical stimulated oxidationV2O5 gelThis work was supported by the Ministry of Education and Science of the Russian Federation in line with government order for Higher Education Institutions in the field of science for 2014-2016 years (project No. 673) and by RFBR grant No. 13-03-00705-a.ReferencesJ. Henry, J. Livingstone. Design, fabrication, and characterization of photonic devices II. Proc. SPIE, 4594, P. 447 (2001).J. Henry, J. Livingstone. Design, fabrication, and characterization of photonic devices II. Proc. SPIE, 4594, P. 447 (2001).Nikolaev Yu.A., Rud’ Yu.V., Terukov E.I., Rud’ V.Yu. Photosensitivity of heterojunctions obtained using thermal oxidation of indium phosphide. Technical Physics Letters, 33 (4), P. 313–315 (2007).Nikolaev Yu.A., Rud’ Yu.V., Terukov E.I., Rud’ V.Yu. Photosensitivity of heterojunctions obtained using thermal oxidation of indium phosphide. Technical Physics Letters, 33 (4), P. 313–315 (2007).Schimper H.-J., Kollonitsch Z., et al. Material studies regarding InP-based high-eficiency solar cells. Journal of Crystal Growth, 287 (2), P. 642–646 (2006).Schimper H.-J., Kollonitsch Z., et al. Material studies regarding InP-based high-eficiency solar cells. Journal of Crystal Growth, 287 (2), P. 642–646 (2006).Lee S., Kim H.J., et al. Transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors with fmax =425 GHz. Electronics Letters, 37 (17), P. 1096–1098 (2001).Lee S., Kim H.J., et al. Transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors with fmax =425 GHz. Electronics Letters, 37 (17), P. 1096–1098 (2001).Wilmsen C.W. Oxide layers on III-V compound semiconductors. Thin solid films, 30, P. 105–117 (1976).Wilmsen C.W. Oxide layers on III-V compound semiconductors. Thin solid films, 30, P. 105–117 (1976).Yamaguchi M., Ando K. Thermal oxidation of InP and properties of oxide films. J. Appl. Phys., 5 (9), P. 5007–5012 (1980).Yamaguchi M., Ando K. Thermal oxidation of InP and properties of oxide films. J. Appl. Phys., 5 (9), P. 5007–5012 (1980).Berman L.S., Gabaraeva A.D., et al. Temporal drift parameter interface indium phosphide – silicon dioxide. Technical Physics Letters, 22 (2), P. 65–69 (1996).Berman L.S., Gabaraeva A.D., et al. Temporal drift parameter interface indium phosphide – silicon dioxide. Technical Physics Letters, 22 (2), P. 65–69 (1996).Pulver D., Wilmsen C.W., Niles D., Kee R. Thermal oxides of In0.5Ga0.5P and In0.5Al0.5P. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 19, P. 207–214 (2001).Pulver D., Wilmsen C.W., Niles D., Kee R. Thermal oxides of In0.5Ga0.5P and In0.5Al0.5P. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 19, P. 207–214 (2001).Pakes A., Skeldon P., et al. Composition and growth of anodic and thermal oxides on InP and GaAs. Surface and Interface Analysis, 34, P. 481–484 (2002).Pakes A., Skeldon P., et al. Composition and growth of anodic and thermal oxides on InP and GaAs. Surface and Interface Analysis, 34, P. 481–484 (2002).Belyakova E.D. Investigation of InP own oxides. Surface. Physics, chemistry, mechanics, 7, P. 88–93 (1992).Belyakova E.D. Investigation of InP own oxides. Surface. Physics, chemistry, mechanics, 7, P. 88–93 (1992).Mittova I.Ya., Pshestanchik V.R. The chemistry of processes which create dielectric layers with functional group substituents on semiconductors by impurity thermo-oxidation. Russian chemical reviews, 60 (9), P. 967– 979 (1991).Mittova I.Ya., Pshestanchik V.R. The chemistry of processes which create dielectric layers with functional group substituents on semiconductors by impurity thermo-oxidation. Russian chemical reviews, 60 (9), P. 967– 979 (1991).Mittova I.Ya., Tomina E.V., et al. Thermal oxidation of InP surfaces modified with NiO + PbO mixtures. Inorganic Materials, 41 (4), P. 323–330 (2005).Mittova I.Ya., Tomina E.V., et al. Thermal oxidation of InP surfaces modified with NiO + PbO mixtures. Inorganic Materials, 41 (4), P. 323–330 (2005).Mittova I.Ya., Tomina E.V., Lapenko A.A., Khorokhordina A.O. Solid-state reactions during thermal oxidation of vanadium-modified GaAs surfaces. Inorganic Materials, 40 (5), P. 441–444 (2004).Mittova I.Ya., Tomina E.V., Lapenko A.A., Khorokhordina A.O. Solid-state reactions during thermal oxidation of vanadium-modified GaAs surfaces. Inorganic Materials, 40 (5), P. 441–444 (2004).Lapenko A.A., Tomina E.V., et al. Dynamics of the surface composition and structure of InP oxidized in the presence of V and V2O5. Inorganic Materials, 44 (11), P. 1163–1168 (2008).Lapenko A.A., Tomina E.V., et al. Dynamics of the surface composition and structure of InP oxidized in the presence of V and V2O5. Inorganic Materials, 44 (11), P. 1163–1168 (2008).Sladkopevtsev B.V., Mittova I.Ya., Tomina E.V., Burtseva N.A. Growth of vanadium oxide films on InP under mild conditions and thermal oxidation of the resultant structures. Inorganic Materials, 48 (2), P. 161– 168 (2012).Sladkopevtsev B.V., Mittova I.Ya., Tomina E.V., Burtseva N.A. Growth of vanadium oxide films on InP under mild conditions and thermal oxidation of the resultant structures. Inorganic Materials, 48 (2), P. 161– 168 (2012).Giorgetti M., Berrettoni M., Smyrl W.H. Doped V2O5-Based cathode materials: Where does the doping metal go? An -ray absorption Spectroscopy study. Chemistry of materials, 19 (24), P. 5991–6000 (2007).Giorgetti M., Berrettoni M., Smyrl W.H. Doped V2O5-Based cathode materials: Where does the doping metal go? An -ray absorption Spectroscopy study. Chemistry of materials, 19 (24), P. 5991–6000 (2007).Petkov V., Trikalitis P.N., et al. Structure of V2O5nH2O xerogel solved by the atomic pair distribution function technique. Journal of the American Chemical Society, 124 (34), P. 10157–10162 (2002).Petkov V., Trikalitis P.N., et al. Structure of V2O5nH2O xerogel solved by the atomic pair distribution function technique. Journal of the American Chemical Society, 124 (34), P. 10157–10162 (2002).Semenenko D.A., Kulova T.L., et al. Electrophysical properties of V2O5 xerogels with lithium embedding as a function of the synthesis process. International scientific journal for alternative energy and ecology, 4 (48), P. 82–86 (2007).Semenenko D.A., Kulova T.L., et al. Electrophysical properties of V2O5 xerogels with lithium embedding as a function of the synthesis process. International scientific journal for alternative energy and ecology, 4 (48), P. 82–86 (2007).Balakhonov S.V., Ivanov V.K., Barantchikov A.E., Churagulov B.R. Differences in physical and chemical properties of vanadium oxide nanomaterials synthesized by hydrothermal and microwave-hydrothermal methods. Nanosystems: physics, chemistry, mathematics, 3 (4), P. 66–74 (2012).Balakhonov S.V., Ivanov V.K., Barantchikov A.E., Churagulov B.R. Differences in physical and chemical properties of vanadium oxide nanomaterials synthesized by hydrothermal and microwave-hydrothermal methods. Nanosystems: physics, chemistry, mathematics, 3 (4), P. 66–74 (2012).Berezina O.Ya., Velichko A.A., et al. Metal-semiconductor transition in nonstoichiometric vanadium dioxide films. Inorganic Materials, 43 (5), P. 505–511 (2007).Berezina O.Ya., Velichko A.A., et al. Metal-semiconductor transition in nonstoichiometric vanadium dioxide films. Inorganic Materials, 43 (5), P. 505–511 (2007).Vinichenko D.A., Zlomanov V.P., et al. Synthesis of vanadium dioxide films by a modified sol-gel process. Inorganic Materials, 47 (3), P. 279–284 (2011).Vinichenko D.A., Zlomanov V.P., et al. Synthesis of vanadium dioxide films by a modified sol-gel process. Inorganic Materials, 47 (3), P. 279–284 (2011).Mittova I.Ya., Tomina E.V., Lapenko A.A., Sladkopevtsev B.V. Synthesis and catalytic performance of V2O5 nanoislands produced on the surface of InP crystals by electroexplosion. Inorganic Materials, 46 (4), P. 383– 388 (2010).Mittova I.Ya., Tomina E.V., Lapenko A.A., Sladkopevtsev B.V. Synthesis and catalytic performance of V2O5 nanoislands produced on the surface of InP crystals by electroexplosion. Inorganic Materials, 46 (4), P. 383– 388 (2010).Mittova I.Ya., Tomina E.V., Lapenko A.A., Sladkopevtsev B.V. The catalytic action of vanadium and its oxides (V) in the oxidation process of AIIIBV semiconductors. Nanosystems: physics, chemistry, mathematics, 3 (2), P. 116–138 (2012).Mittova I.Ya., Tomina E.V., Lapenko A.A., Sladkopevtsev B.V. The catalytic action of vanadium and its oxides (V) in the oxidation process of AIIIBV semiconductors. Nanosystems: physics, chemistry, mathematics, 3 (2), P. 116–138 (2012).Tret’yakov N.N., Mittova I.Ya., et al. Effect of the procedure of chemostimulator application on the surface characteristics of VxOy/InP structures in the process of their thermooxidation. Russian Journal of General Chemistry, 83 (8), P. 1589–1593 (2013).Tret’yakov N.N., Mittova I.Ya., et al. Effect of the procedure of chemostimulator application on the surface characteristics of VxOy/InP structures in the process of their thermooxidation. Russian Journal of General Chemistry, 83 (8), P. 1589–1593 (2013).

The authors declare that there are no conflicts of interest present.