najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМО10.17586/2220-8054-2015-6-6-837-842najo-914Research ArticlePAPERS, PRESENTED AT THE CONFERENCEPAPERS, PRESENTED AT THE CONFERENCEThe lateral capacitance of nanometer MNOSFET with a single charge trapped in oxide layer or at SiO2 - SI3 N4 interfaceatAtamuratovA. E.

Tashkent

a.atamuratov@tuit.uzAminovU. A.

Tashkent

AtamuratovaZ. A.

Tashkent

HalillaevM.

Tashkent

AbdikarimovA.

Tashkent

MatyakubovH.

Tashkent

Urganch Branch of Tashkent University of Information TechnologiesUzbekistanUrganch State UniversityUzbekistan20151508202566837842Copyright © Atamuratov A.E., Aminov U.A., Atamuratova Z.A., Halillaev M., Abdikarimov A., Matyakubov H., 20252025Atamuratov A.E., Aminov U.A., Atamuratova Z.A., Halillaev M., Abdikarimov A., Matyakubov H.Atamuratov A.E., Aminov U.A., Atamuratova Z.A., Halillaev M., Abdikarimov A., Matyakubov H.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/914

In this work the dependence between the position of single charge trapped in an oxide layer or at SiO2 { Si3N4 interface and the concentration distribution of charge carriers on a semiconductor substrate surface of the nanometer n-channel Metal-Nitride-Oxide-Semiconductor Field Effect Transistor (MNOSFET) and p-channel MNOSFET with n+ drain area is studied. It is shown that the lateral capacitances of nanometer MNOSFET depend on the position of single charge in oxide or at interface. This dependence allows one to estimate the position of trapped charges along the channel of transistor.

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The authors declare that there are no conflicts of interest present.