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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">najo</journal-id><journal-title-group><journal-title xml:lang="en">Nanosystems: Physics, Chemistry, Mathematics</journal-title><trans-title-group xml:lang="ru"><trans-title>Наносистемы: физика, химия, математика</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2220-8054</issn><issn pub-type="epub">2305-7971</issn><publisher><publisher-name>Университет ИТМО</publisher-name></publisher></journal-meta><article-meta><article-id custom-type="elpub" pub-id-type="custom">najo-933</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Статьи</subject></subj-group></article-categories><title-group><article-title>Boron-doped anatase: electronic band structure, boron atom locations and magnetic state</article-title><trans-title-group xml:lang="ru"><trans-title></trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="western" xml:lang="en"><surname>Zhukov</surname><given-names>V. P.</given-names></name></name-alternatives><bio xml:lang="en"><p>Ekaterinburg</p></bio><email xlink:type="simple">zhukov@ihim.uran.ru</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff xml:lang="en" id="aff-1"><institution>Institute of Solid State Chemistry, Urals Branch of the Russian Academy of Sciences</institution><country>Russian Federation</country></aff><pub-date pub-type="collection"><year>2014</year></pub-date><pub-date pub-type="epub"><day>15</day><month>08</month><year>2025</year></pub-date><volume>5</volume><issue>4</issue><fpage>509</fpage><lpage>516</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Zhukov V.P., 2025</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="ru">Zhukov V.P.</copyright-holder><copyright-holder xml:lang="en">Zhukov V.P.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://nanojournal.ifmo.ru/jour/article/view/933">https://nanojournal.ifmo.ru/jour/article/view/933</self-uri><abstract><p>The first-principle spin-resolved GGA and GGA+U calculations for the electronic band structure of the boron-doped TiO2 with anatase structure have been performed. The locations of boron atoms in the interstitial and oxygen position have been studied. We have found two interstitial positions: a stable one with three neighboring oxygen atoms, and a metastable one in the center of the flattened tetrahedron of oxygen atoms. The boron location in interstitial position is energetically more favorable than the location inside the oxygen position. In accordance with experiments, the GGA+U approach produces spin-polarized solutions for interstitial boron positions, whereas the GGA approach fails to produce a spin-polarized solution.</p></abstract><kwd-group xml:lang="en"><kwd>anatase</kwd><kwd>boron doping</kwd><kwd>photocatalyses</kwd><kwd>optical absorption</kwd><kwd>band structure</kwd><kwd>first-principle calculations</kwd></kwd-group><funding-group><funding-statement xml:lang="en">This research has been supported by the grants of RFBR numbers 12-03-00453-a, 13-03-00265-a and partially supported by the projects of the Urals Branch of the Russian Academy of Sciences numbers 12-Y-3-1009 and 12-Y-3-1001. 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