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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">najo</journal-id><journal-title-group><journal-title xml:lang="en">Nanosystems: Physics, Chemistry, Mathematics</journal-title><trans-title-group xml:lang="ru"><trans-title>Наносистемы: физика, химия, математика</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2220-8054</issn><issn pub-type="epub">2305-7971</issn><publisher><publisher-name>Университет ИТМО</publisher-name></publisher></journal-meta><article-meta><article-id custom-type="elpub" pub-id-type="custom">najo-956</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>GRAPHENE</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>GRAPHENE</subject></subj-group></article-categories><title-group><article-title>Utilizing of the medium-energy ion scattering spectrometry for the composition investigation of graphene oxide films on silicon surface</article-title><trans-title-group xml:lang="ru"><trans-title></trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="western" xml:lang="en"><surname>Afrosimov</surname><given-names>V. V.</given-names></name></name-alternatives><bio xml:lang="en"><p>Moscow</p></bio><email xlink:type="simple">r.ilin@mail.ioffe.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="western" xml:lang="en"><surname>Dideykin</surname><given-names>A. T.</given-names></name></name-alternatives><bio xml:lang="en"><p>Moscow</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="western" xml:lang="en"><surname>Sakharov</surname><given-names>V. I.</given-names></name></name-alternatives><bio xml:lang="en"><p>Moscow</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="western" xml:lang="en"><surname>Serenkov</surname><given-names>I. T.</given-names></name></name-alternatives><bio xml:lang="en"><p>Moscow</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="western" xml:lang="en"><surname>Vul</surname><given-names>S. P.</given-names></name></name-alternatives><bio xml:lang="en"><p>Moscow</p></bio><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff xml:lang="en" id="aff-1"><institution>Ioffe Physical-Technical Institute of the Russian Academy of Sciences</institution><country>Russian Federation</country></aff><pub-date pub-type="collection"><year>2014</year></pub-date><pub-date pub-type="epub"><day>15</day><month>08</month><year>2025</year></pub-date><volume>5</volume><issue>1</issue><fpage>113</fpage><lpage>116</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Afrosimov V.V., Dideykin A.T., Sakharov V.I., Serenkov I.T., Vul S.P., 2025</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="ru">Afrosimov V.V., Dideykin A.T., Sakharov V.I., Serenkov I.T., Vul S.P.</copyright-holder><copyright-holder xml:lang="en">Afrosimov V.V., Dideykin A.T., Sakharov V.I., Serenkov I.T., Vul S.P.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://nanojournal.ifmo.ru/jour/article/view/956">https://nanojournal.ifmo.ru/jour/article/view/956</self-uri><abstract><p>The possibilities of Medium-Energy Ion Scattering (MEIS) spectrometry combined with ion channeling for the estimation of the composition of single layer graphene oxide films and produced graphene layers deposited on the surface of standard silicon substrates was investigated. It was found that the oxygen amount in the natural surface silicon oxide ranges from 2-8 times the possible oxygen content in a graphene oxide layer. This causes difficulties in the estimation of the oxygen concentration in graphene oxide deposited on such substrates. The proposed method of preliminary single hydrogen cathode surface processing in electroplating bath leads to the significant decrease of surface layer oxygen content which results in an increase in the accuracy of reduced graphene oxide composition estimation.</p></abstract><kwd-group xml:lang="en"><kwd>graphene oxide</kwd><kwd>silicon oxide</kwd><kwd>Rutherford Backscattering Spectrometry</kwd></kwd-group><funding-group><funding-statement xml:lang="en">Authors appreciate Russian Federal Objective Program (agreement 21.09.2012 8683) for financial support.</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">D. Reddy, L.F. Register, G.D. Carpenter, S.K. Banerjee. Graphene field-effect transistors. J. Phys. D: Appl. Phys., 44, P. 313001 (20p.) (2011).</mixed-citation><mixed-citation xml:lang="en">D. Reddy, L.F. Register, G.D. Carpenter, S.K. Banerjee. 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