najoNanosystems: Physics, Chemistry, MathematicsНаносистемы: физика, химия, математика2220-80542305-7971Университет ИТМОnajo-957Research ArticleGRAPHENEGRAPHENEInvestigation of structure and transport properties of graphene grown by low-pressure no flow CVD on polycrystalline Ni filmsKononenkoO. V.

Chernogolovka

oleg@iptm.ruMatveevV. N.

Chernogolovka

FieldD. P.

Pullman

MatveevD. V.

Chernogolovka

BozhkoS. I.

Chernogolovka

RoshchupkinD. V.

Chernogolovka

VdovinE. E.

Chernogolovka

BaranovA. N.

Moscow

Institute of Microelectronics Technology and High Purity Materials, Russian Academy of SciencesRussian FederationSchool of Mechanical and Materials Engineering, Washington State UniversityUnited StatesInstitute of Solid State Physics, Russian Academy of SciencesRussian FederationMoscow State UniversityRussian Federation20141508202551117122Copyright © Kononenko O.V., Matveev V.N., Field D.P., Matveev D.V., Bozhko S.I., Roshchupkin D.V., Vdovin E.E., Baranov A.N., 20252025Kononenko O.V., Matveev V.N., Field D.P., Matveev D.V., Bozhko S.I., Roshchupkin D.V., Vdovin E.E., Baranov A.N.Kononenko O.V., Matveev V.N., Field D.P., Matveev D.V., Bozhko S.I., Roshchupkin D.V., Vdovin E.E., Baranov A.N.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://nanojournal.ifmo.ru/jour/article/view/957

Graphene films were synthesized by the low-pressure no flow CVD on polycrystalline nickel catalyst films grown by the self-ion assisted deposition technique at different biases. Graphene films were transferred to a SiO2/Si substrate using PMMA. The graphene grown on Ni films with bimodal grain size distribution and weaker (111) texture had higher thickness uniformity and a lower number of graphene layers. The graphene grown on Ni films with a monomodal grain size distribution and stronger (111) texture had lower thickness uniformity and a higher number of graphene layers. The transport properties of the graphene films were investigated with the aid of Hall measurements.

GrapheneCVD SynthesisElectronic propertiesReferencesNovoselov K.S., Geim A.K., et al. Two-dimensional gas of massless Dirac fermions in graphene. Nature, 438, P. 197–200 (2005).Novoselov K.S., Geim A.K., et al. Two-dimensional gas of massless Dirac fermions in graphene. Nature, 438, P. 197–200 (2005).Katsnelson M.I., Novoselov K.S. Graphene: New bridge between condensed matter physics and quantum electrodynamics. Solid State Commun., 143, P. 3–13 (2007).Katsnelson M.I., Novoselov K.S. Graphene: New bridge between condensed matter physics and quantum electrodynamics. Solid State Commun., 143, P. 3–13 (2007).Meyer J.C., Geim A.K., et al. The structure of suspended graphene sheets. Nature, 446, P. 60–63 (2007).Meyer J.C., Geim A.K., et al. The structure of suspended graphene sheets. Nature, 446, P. 60–63 (2007).Schedin F., Geim A.K., et al. Detection of individual gas molecules adsorbed on graphene. Nature Mater., 6, P. 652–655 (2007).Schedin F., Geim A.K., et al. Detection of individual gas molecules adsorbed on graphene. Nature Mater., 6, P. 652–655 (2007).Novoselov K. S., Geim A. K., et al. Electric Field Effect in Atomically Thin Carbon Films. Science, 306, P. 666–669 (2004).Novoselov K. S., Geim A. K., et al. Electric Field Effect in Atomically Thin Carbon Films. Science, 306, P. 666–669 (2004).Zhang Y., Gomez L., et al. Comparison of Graphene Growth on Single-Crystalline and Polycrystalline Ni by Chemical Vapor Deposition. J. Phys. Chem. Lett., 1, P. 3101–3107 (2010).Zhang Y., Gomez L., et al. Comparison of Graphene Growth on Single-Crystalline and Polycrystalline Ni by Chemical Vapor Deposition. J. Phys. Chem. Lett., 1, P. 3101–3107 (2010).Thiele S., Reina A., et al. Engineering polycrystalline Ni films to improve thickness uniformity of the chemical-vapor-deposition-grown graphene films. Nanotechnology, 21, P. 015601 (2010).Thiele S., Reina A., et al. Engineering polycrystalline Ni films to improve thickness uniformity of the chemical-vapor-deposition-grown graphene films. Nanotechnology, 21, P. 015601 (2010).Liu N., Fu L., et al. Universal Segregation Growth Approach to Wafer-Size Graphene from Non-Noble Metals. Nano Lett., 11, P. 297–303 (2011).Liu N., Fu L., et al. Universal Segregation Growth Approach to Wafer-Size Graphene from Non-Noble Metals. Nano Lett., 11, P. 297–303 (2011).Reina A., Thiele S., et al. Growth of large-area single- and Bi-layer graphene by controlled carbon precipitation on polycrystalline Ni surfaces. J. Nano Res., 2, P. 509–516 (2009).Reina A., Thiele S., et al. Growth of large-area single- and Bi-layer graphene by controlled carbon precipitation on polycrystalline Ni surfaces. J. Nano Res., 2, P. 509–516 (2009).Kononenko O.V., Matveev V.N., et al. The effect of self-ion bombardment on the properties of thin metal films. Vacuum, 46, P. 685–690 (1995).Kononenko O.V., Matveev V.N., et al. The effect of self-ion bombardment on the properties of thin metal films. Vacuum, 46, P. 685–690 (1995).Field D.P., Kononenko O.V., Matveev V.N. The microstructure of Cu films deposited by the self-ion assisted technique. J. Electron. Mater., 31, P. 40–44 (2002).Field D.P., Kononenko O.V., Matveev V.N. The microstructure of Cu films deposited by the self-ion assisted technique. J. Electron. Mater., 31, P. 40–44 (2002).Adams B.L., Wright S.I., Kunze K. Orientation imaging: The emergence of a new microscopy. Metall. Trans., 24A, P. 819–831 (1993).Adams B.L., Wright S.I., Kunze K. Orientation imaging: The emergence of a new microscopy. Metall. Trans., 24A, P. 819–831 (1993).Krieger-Lassen N.C., Conradsen K., Juul-Jensen D. Image processing procedures for analysis of electron back scattering patterns. Scanning Microscopy, 6, P. 115–121 (1992).Krieger-Lassen N.C., Conradsen K., Juul-Jensen D. Image processing procedures for analysis of electron back scattering patterns. Scanning Microscopy, 6, P. 115–121 (1992).Ferrari A.C. Raman spectroscopy of graphene and graphite: Disorder, electron-phonon coupling, doping and nonadiabatic effects. Solid State Commun., 143, P. 47–57 (2007).Ferrari A.C. Raman spectroscopy of graphene and graphite: Disorder, electron-phonon coupling, doping and nonadiabatic effects. Solid State Commun., 143, P. 47–57 (2007).Gupta A., Chen G., et al. Raman Scattering from High-Frequency Phonons in Supported N-Graphene Layer Films. Nano Lett., 6, P. 2667–2673 (2006).Gupta A., Chen G., et al. Raman Scattering from High-Frequency Phonons in Supported N-Graphene Layer Films. Nano Lett., 6, P. 2667–2673 (2006).Ferrari A.C., MeyerJ.C., et al. Raman Spectrum of Graphene and Graphene Layers. Phys. Rev. Lett., 97, P. 187401 (2006).Ferrari A.C., MeyerJ.C., et al. Raman Spectrum of Graphene and Graphene Layers. Phys. Rev. Lett., 97, P. 187401 (2006).Cancado L.G., Reina A., Kong J., Dresselhaus M.S. Geometrical Approach for the Study of G’ Band in the Raman Spectrum of Monolayer Graphene, Bilayer Graphene, and Bulk Graphite. Phys. Rev. B, 77, P. 245408 (2008).Cancado L.G., Reina A., Kong J., Dresselhaus M.S. Geometrical Approach for the Study of G’ Band in the Raman Spectrum of Monolayer Graphene, Bilayer Graphene, and Bulk Graphite. Phys. Rev. B, 77, P. 245408 (2008).

The authors declare that there are no conflicts of interest present.