Tunneling current in carbon nanotubes with deep impurities
Abstract
In this paper we study the tunneling contact of carbon nanotubes with deep impurities and metal. The tunneling current in contact nanotube-metal was investigated. The dependence of current-voltage characteristic of such contact on the band gap of the impurity was analyzed. An area with negative differential conductivity was observed.
About the Authors
N. N. Konobeeva
Volgograd State University
Russian Federation
Russian Federation
Volgograd
M. B. Belonenko
Volgograd Institute of Business
Russian Federation
Russian Federation
Volgograd
References
1. A.A. Gvelisiani, E.A. Shelonin. Behavior and properties of dopped impurities in semiconductors. IPC MITHT M.V. Lomosov, Moscow: 2004. 80 p.
2. V.N. Mantsevich, N.S. Maslova. Spatial effects of Fano resonance in local tunneling conductivity in vicinity of impurity on semiconductor surface. Pis’ma v ZheTF, 91, P. 150–153 (2010).
3. V.N. Mantsevich, N.S. Maslova. The influence of localized states charging of formula nor shown tunneling current noise spectrum. Solid state communications, 150, P. 2072–2075 (2010).
4. A. Cortijo, F. Guinea, M.A.H. Vozmediano. Geometrical and topological aspects of grapheme and related materials. arXiv.org 1112.2054v1, (2011).
5. P. Harris. Carbon nanotubes and related structures. New materials of XXI century. Technosphera, Moscow: 2003. 336 p.
6. L.S. Levitov,.V. Shitov. Green‘s functions. Tasks with solutions. Fizmatlit, Moscow: 2003. 392 p
Review
For citations:
Konobeeva N.N., Belonenko M.B. Tunneling current in carbon nanotubes with deep impurities. Nanosystems: Physics, Chemistry, Mathematics. 2013;4(4):555-558.
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