Tunneling current in carbon nanotubes with deep impurities
Аннотация
In this paper we study the tunneling contact of carbon nanotubes with deep impurities and metal. The tunneling current in contact nanotube-metal was investigated. The dependence of current-voltage characteristic of such contact on the band gap of the impurity was analyzed. An area with negative differential conductivity was observed.
Об авторах
N. Konobeeva
Volgograd State University
Россия
Россия
M. Belonenko
Volgograd Institute of Business
Россия
Россия
Список литературы
1. A.A. Gvelisiani, E.A. Shelonin. Behavior and properties of dopped impurities in semiconductors. IPC MITHT M.V. Lomosov, Moscow: 2004. 80 p.
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Рецензия
Для цитирования:
, . Наносистемы: физика, химия, математика. 2013;4(4):555-558.
For citation:
Konobeeva N.N., Belonenko M.B. Tunneling current in carbon nanotubes with deep impurities. Nanosystems: Physics, Chemistry, Mathematics. 2013;4(4):555-558.
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