The effects of defects on electron transport in metallic single wall carbon nanotubes
Abstract
We report the transport behavior of an open-end metallic single wall carbon nanotube (SWCNT) with and without local structural defects using the non-equilibrium Green’s functions approach together with the density functional theory (DFT). The transmission spectra and the projected density of states for the devices such as SWCNT (3, 3), (4, 4), (5, 5) and (6, 6) with and without defects were compared. In all cases, we found that the Stone-Wales defect had an almost negligible impact on the electrical performance compared to the monovacancy defect of the single wall carbon nanotubes at the Fermilevel. The Current-Voltage (I-V) characteristics of the devices were studied using the generalized Landauer - Buttiker formalism under low bias conditions. From our results, we concluded that our systems were suitable for use in various CNT based nano-electronic devices.
Keywords
Supporting agencies: The authors are thankful to the financial support from DST-FIST (Government of India) under Ref. No. SR / FST / PSI - 010 / 2010.
About the Authors
S. Sivasathya
Centre for Material Sciences and Nanodevices, SRM University, Kattankulathur
Tamilnadu
India
India
Department of Physics and Nanotechnology
D. John Thiruvadigal
Centre for Material Sciences and Nanodevices, SRM University, Kattankulathur
Tamilnadu
India
India
Department of Physics and Nanotechnology
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Review
For citations:
Sivasathya S., Thiruvadigal D.J. The effects of defects on electron transport in metallic single wall carbon nanotubes. Nanosystems: Physics, Chemistry, Mathematics. 2013;4(3):405-408.
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