Influence of precursors variation on the morphology and electrochemical performance of NiSx thin films synthesized via the SILAR
https://doi.org/10.17586/2220-8054-2025-16-5-706-711
Abstract
In this work, nickel sulfide thin films were synthesized via the SILAR method using different nickel salts as precursors. The influence of the precursor salt on the morphology and electrochemical performance of the layers was systematically investigated. SEM analysis revealed that NiSx films prepared from nickel chloride exhibited the most uniform and crack-free morphology. Electrochemical measurements demonstrated a strong correlation between film quality and capacitive behaviour. Notably, the NiSx electrode synthesized using nickel chloride achieved a maximum specific capacitance of 1902 F/g at a current density of 1 A/g. These findings highlight the critical role of precursor selection in optimizing the structural and electrochemical properties of nickel sulfide electrodes for energy storage applications.
Supporting agencies: This work was supported by Russian Science Foundation (grant number 24-19-20060, https://rscf.ru/project/24-19-20060/) and St. Petersburg Science Foundation (agreement number 24-19-20060). The authors are very grateful to Dr. Dmitry Danilovich for their invaluable research assistance of FTIR spectroscopy. FTIR and SEM studies of the samples performed using devices of the Engineering Center of the St. Petersburg State Technological Institute (Technical University).
About the Authors
M. V. Kaneva
Ioffe Institute, Hydrogen Energy Laboratory
Russian Federation
Russian Federation
Maria V. Kaneva
St Petersburg, 19402
A. A. Meleshko
Ioffe Institute, Hydrogen Energy Laboratory
Russian Federation
Russian Federation
Alexandra A. Meleshko
St Petersburg, 19402
M. I. Tenevich
Ioffe Institute, Hydrogen Energy Laboratory
Russian Federation
Russian Federation
Maxim I. Tenevich
St Petersburg, 19402
M. O. Enikeeva
Ioffe Institute, Hydrogen Energy Laboratory
Russian Federation
Russian Federation
Maria O. Enikeeva
St Petersburg, 19402
I. A. Kodintsev
Ioffe Institute, Hydrogen Energy Laboratory
Russian Federation
Russian Federation
Ilya A. Kodintsev
St Petersburg, 19402
A. A. Lobinsky
Ioffe Institute, Hydrogen Energy Laboratory
Russian Federation
Russian Federation
Artem A. Lobinsky
St Petersburg, 19402
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For citations:
Kaneva M.V., Meleshko A.A., Tenevich M.I., Enikeeva M.O., Kodintsev I.A., Lobinsky A.A. Influence of precursors variation on the morphology and electrochemical performance of NiSx thin films synthesized via the SILAR. Nanosystems: Physics, Chemistry, Mathematics. 2025;16(5):706-711. https://doi.org/10.17586/2220-8054-2025-16-5-706-711
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