Influence of precursors variation on the morphology and electrochemical performance of NiSx thin films synthesized via the SILAR | Kaneva | Nanosystems: Physics, Chemistry, Mathematics

Nanosystems: Physics, Chemistry, Mathematics

ISSN 2220-8054 (Print)
ISSN 2305-7971 (Online)

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Kaneva M.V., Meleshko A.A., Tenevich M.I., Enikeeva M.O., Kodintsev I.A., Lobinsky A.A. Influence of precursors variation on the morphology and electrochemical performance of NiSx thin films synthesized via the SILAR. Nanosystems: Physics, Chemistry, Mathematics. 2025;16(5):706-711. https://doi.org/10.17586/2220-8054-2025-16-5-706-711

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ISSN 2220-8054 (Print)
ISSN 2305-7971 (Online)

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About the Authors

M. V. Kaneva
Ioffe Institute, Hydrogen Energy Laboratory
Russian Federation

Maria V. Kaneva

St Petersburg, 19402

A. A. Meleshko
Ioffe Institute, Hydrogen Energy Laboratory
Russian Federation

Alexandra A. Meleshko

St Petersburg, 19402

M. I. Tenevich
Ioffe Institute, Hydrogen Energy Laboratory
Russian Federation

Maxim I. Tenevich

St Petersburg, 19402

M. O. Enikeeva
Ioffe Institute, Hydrogen Energy Laboratory
Russian Federation

Maria O. Enikeeva

St Petersburg, 19402

I. A. Kodintsev
Ioffe Institute, Hydrogen Energy Laboratory
Russian Federation

Ilya A. Kodintsev

St Petersburg, 19402

A. A. Lobinsky
Ioffe Institute, Hydrogen Energy Laboratory
Russian Federation

Artem A. Lobinsky

St Petersburg, 19402

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