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| Issue | Title | |
| Vol 16, No 3 (2025) | Influence of SiC MOSFET design on on-resistance and breakdown voltage | Abstract PDF (Eng) similar documents |
| O. B. Chukanova, K. A. Tsarik | ||
| "... of the device, we proposed to increase the doping level of the drift region, and suggested a new transistor ..." | ||
| Vol 13, No 5 (2022) | Investigation of boron-doped delta layers in CVD diamond grown on single-sector HPHT substrates | Abstract PDF (Eng) similar documents |
| M. A. Lobaev, A. L. Vikharev, A. M. Gorbachev, D. B. Radishev, E. A. Arkhipova, M. N. Drozdov, V. A. Isaev, S. A. Bogdanov, V. A. Kukushkin | ||
| "... mobility compared to uniform doping with the same concentration of boron atoms. An explanation is proposed ..." | ||
| Vol 11, No 2 (2020) | Electronic transport in penta-graphene nanoribbon devices using carbon nanotube electrodes: A computational study | Abstract PDF (Eng) similar documents |
| M. Shunaid Parvaiz, Khurshed A. Shah, G. N. Dar, Sugata Chowdhury, Olasunbo Farinre, Prabhakar Misra | ||
| "... -doped model. In summary, our findings show clearly that doping can effectively modulate the electronic ..." | ||
| Vol 10, No 3 (2019) | Influence of carbon or nitrogen dopants on the electronic structure, optical properties and photocatalytic activity of partially reduced titanium dioxide | Abstract PDF (Eng) similar documents |
| V. P. Zhukov, M. G. Kostenko, A. A. Rempel, I. R. Shein | ||
| Vol 14, No 1 (2023) | Performance enhancement of triboelectric nanogenerator using iodine doped PVDF | Abstract PDF (Eng) similar documents |
| R. Phogaat, V. Yepuri | ||
| Vol 11, No 6 (2020) | Nanostructured SiGe:Sb solid solutions with improved thermoelectric figure of merit | Abstract PDF (Eng) similar documents |
| M. V. Dorokhin, P. B. Demina, Yu. M. Kuznetsov, I. V. Erofeeva, A. V. Zdoroveyshchev, M. S. Boldin, E. A. Lantsev, A. A. Popov, E. А. Uskova, V. N. Trushin | ||
| Vol 6, No 6 (2015) | Quasi free-standing one-dimensional nanocrystals of PbTe grown in 1.4 nm SWNTs | Abstract PDF (Eng) similar documents |
| A. V. Lukashin, N. S. Falaleev, N. I. Verbitskiy, A. A. Volykhov, I. I. Verbitskiy, L. V. Yashna, A. S. Kumskov, N. A. Kiselev, A. A. Eliseev | ||
| Vol 5, No 4 (2014) | Boron-doped anatase: electronic band structure, boron atom locations and magnetic state | Abstract PDF (Eng) similar documents |
| V. P. Zhukov | ||
| Vol 4, No 1 (2013) | Preparation route of low-dimensional spin-peierls magnetic Cu 1-x Ni x GeO 3 in a form of nanorods | Abstract similar documents |
| A. V. Barulin, A. V. Grigorieva, E. A. Goodilin, E. A. Yakubovich, E. A. Pomerantseva, A. V. Semeno, S. V. Demeshev | ||
| "... that corresponds to the theoretical simulation completely. Doping with nickel leads to a rise of dopant ..." | ||
| Vol 8, No 1 (2017) | Metal-insulator (fermion-boson)-crossover origin of pseudogap phase of cuprates I: anomalous heat conductivity, insulator resistivity boundary, nonlinear entropy | Abstract PDF (Eng) similar documents |
| B. Abdullaev, C.-H. Park, K.-S. Park, I.-J. Kang | ||
| "... ), seen in the pseudogap (PG) region of the temperature-doping phase diagram of copper-oxides under ..." | ||
| Vol 8, No 1 (2017) | Normal state pair nematicity and hidden magnetic order and metal-insulator (fermion-boson)- crossover origin of pseudogap phase of cuprates II | Abstract PDF (Eng) similar documents |
| B. Abdullaev, D. B. Abdullaev, C.-H. Park, M. M. Musakhanov | ||
| "... .04491] and explain the long-discussed transition of the electric charge density from doping to doping+1 dependence ..." | ||
| 1 - 11 of 11 Items | ||
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