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| Issue | Title | |
| Vol 16, No 3 (2025) | Influence of SiC MOSFET design on on-resistance and breakdown voltage | Abstract PDF (Eng) similar documents |
| O. B. Chukanova, K. A. Tsarik | ||
| "... of the device, we proposed to increase the doping level of the drift region, and suggested a new transistor ..." | ||
| Vol 13, No 5 (2022) | Investigation of boron-doped delta layers in CVD diamond grown on single-sector HPHT substrates | Abstract PDF (Eng) similar documents |
| M. A. Lobaev, A. L. Vikharev, A. M. Gorbachev, D. B. Radishev, E. A. Arkhipova, M. N. Drozdov, V. A. Isaev, S. A. Bogdanov, V. A. Kukushkin | ||
| "... mobility compared to uniform doping with the same concentration of boron atoms. An explanation is proposed ..." | ||
| Vol 14, No 1 (2023) | Performance enhancement of triboelectric nanogenerator using iodine doped PVDF | Abstract PDF (Eng) similar documents |
| R. Phogaat, V. Yepuri | ||
| 1 - 3 of 3 Items | ||
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