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| Issue | Title | |
| Vol 16, No 2 (2025) | Simulation of a quasi-ballistic quantum-barrier field-effect transistor based on GaAs quantum wire | Abstract PDF (Eng) similar documents |
| D. V. Pozdnyakov, A. V. Borzdov, V. M. Borzdov | ||
| "... A new constructive solution of field-effect transistor (FET) with a Schottky barrier ..." | ||
| Vol 11, No 3 (2020) | Negative differential resistance in gate all-around spin field effect transistors | Abstract PDF (Eng) similar documents |
| G.F.A. Malik, M. A. Kharadi, F. A. Khanday, K. A. Shah, N. Parveen | ||
| "... In this paper, novel gate all-around spin field effect transistors (GAA Spin-FETs) with three ..." | ||
| Vol 7, No 3 (2016) | Observation of insulating and metallic-type behavior in Bi2Se3 transistor at room temperature | Abstract PDF (Eng) similar documents |
| V. Gunasekaran, G. H. Park, K. S. Kim, M. Suemitsu, H. Fukidome | ||
| "... . In this work, multi-layer Bi2Se3 field effect transistors (FETs) are prepared by standard lithography followed ..." | ||
| Vol 4, No 6 (2013) | A quantitative model for quantum transport in nano-transistors | Abstract PDF (Eng) similar documents |
| U. Wulf, M. Krahlisch, J. Kučera, H. Richter, J. Höntschel | ||
| "... in a nanotransistor was developed yielding qualitative agreement with the trace of an experimental transistor. To make ..." | ||
| 1 - 4 of 4 Items | ||
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