GaAs thermal oxidation activated by the coaction of p-block oxides
Abstract
This study summarizes the results for the investigation of the process of gallium arsenide thermal oxidation processes activated by the coaction of the oxides in Sb2O3+Bi2O3, Sb2O3+PbO and PbO+Bi2O3 binary compositions was studied. The analysis of the character and nature of nonlinear effect of various compositions of chemostimulators on the GaAs-supported oxide layer thickness grown on the GaAs surface was performed. It is shown that the actual oxide layer thickness is different from the additive value. The main patterns of the impact for binary compositions of p-element oxides of p-elements on thermal oxidation of gallium arsenide determined by physico-chemical nature of chemostimulators, the nature of their interaction and the method of administration in the system were described.
Supporting agencies: This work was supported by the Ministry of Education and Science of the countryregionplaceRussian Federation in line with government order for Higher Education Institutions in the field of science for 2014-2016 years (project No. 673) and by RFBR grant No. 13-03- 00705-a.
About the Authors
I. Ya. Mittova
Voronezh State University
Russian Federation
Russian Federation
Universitetskaya pl. 1, Voronezh, 394893
V. F. Kostryukov
Voronezh State University
Russian Federation
Russian Federation
Universitetskaya pl. 1, Voronezh, 394893
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Review
For citations:
Mittova I.Ya., Kostryukov V.F. GaAs thermal oxidation activated by the coaction of p-block oxides. Nanosystems: Physics, Chemistry, Mathematics. 2014;5(3):417-426.
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