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Optical properties of sodium niobate thin films

https://doi.org/10.17586/2220-8054-2016-7-4-583-591

Abstract

NaNbO3 thin films were deposited under different conditions by rf magnetron sputtering of ceramic target. Spectral transmission of the deposited films was measured in the UV-Visible-near IR range. Films deposited at 300 °C showed more absorption, and films annealed at 300 °C showed less absorption than those deposited at room temperature (RT), which was found to be consistent with their X-ray diffraction (XRD) patterns. From the observed transmission spectra, refractive index, optical band gap, absorption coefficient, extinction coefficient and film thickness were calculated for the deposited films. Refractive index at 550 nm wavelength was found to be 2.11, 2.01 and 2.34 for the films deposited at RT, 300 °C and annealed at 300 °C, respectively. The refractive index was found to be almost constant with respect to frequency for the films annealed at 300 °C. Optical band gap was found 3.82, 3.7 and 3.81 eV for the films deposited at RT, 300 °C, and annealed at 300 °C, respectively. Film thickness was shown to decrease with annealing. Absorption and extinction coefficients decreased with increasing wavelength, in all the samples. Band gaps associated with different interactions have been calculated for the deposited films. Phonon assisted indirect forbidden transition was most favorable in the deposited films.

About the Authors

V. Lingwal
Pt. L.M.S. Govt. PG College Rishikesh
India

Uttarakhand, 249 201



A. I. Kandari
HNB Garhwal University
India

USIC

Srinagar (Garhwal), Uttarakhand, 246 174



N. S. Panwar
HNB Garhwal University
India

USIC

Srinagar (Garhwal), Uttarakhand, 246 174



References

1. Gunther P. Nonlinear optical crystals for optical frequency doubling with laser diodes. Proc. SPIE, 1981, 236, P. 8–19.

2. Okuyama M., Matsui Y., Nakano H., Hamakawa Y. PbTiO3 ferroelectric thin film gate fet for infrared detection. Ferrelectrctrics, 1981, 33 (1), P. 235–241.

3. Hewig G.H., Jain K. Frequency doubling in a LiNbO3 thin film deposited on sapphire. J. Appl. Phys., 1983, 54 (1), P. 57–61.

4. Baumert J.C., Hoffnagle J., Gunther P. Nonlinear optical effects in KNbO3 crystals at AlxGa1−xAs, dye, ruby and Nd:YAG laser. Proc. SPIE, 1984, 492, P. 374–386.

5. Iijimo K., Tomita Y., Takayama R., Ueda I. Preparation of C-axis orientated PbTiO3 thin films and their crystallographic, dielectric, and pyroelectric properties. J. Appl. Phys., 1986, 60 (1), P. 361–367.

6. Martin S.J., Butler M.A., Land C.E. Ferroelectric optical image comparator using PLZT thin films. Electron. Lett., 1988, 24 (24), P. 1486–1487.

7. Krishnakumar S., Oguz V.H., et al. Deposition and characterization of thin ferroelectric lead lanthanum zirconate titanate (PLZT) films on sapphire for spatial light modulators applications. IEEE Trans. Ultrason. Ferrelec. Freq. Contr., 1991, 38 (6), P. 585–590.

8. Ivey M., Mancha S., Carter R. Optical information storage and charge traps in PZT thin films. IEEE Trans. Ultrson. Ferroelec. Freq. Contr., 1991, 38 (4), P. 337–343.

9. Tamada H., Yamada A., Saitoh M. LiNbO3 thin film optical waveguide grown by liquid phase epitaxy and its application to second- harmonic generation. J. Appl. Phys., 1991, 70 (5), P. 2536–2541.

10. Gutmann R., Hullinger J., Hauert R., Mosser E.M. Auger electron and x-ray photoelectrons spectroscopy of monocrystalline layers of KTa1−xNbxO3 grown by liquid-phase epitaxy. J. Appl. Phys., 1991, 70 (5), P. 2648–2653.

11. Polla D.I., Ye C., Tamagawa T. Surface-micromachined PbTiO3 pyroelectric detectors. Appl. Phys. Lett., 1991, 59 (1), P. 3539–3544.

12. Sreenivas K., Mansingh A., Sayer M. Structural and electrical properties of rf-sputtered amorphous barium titanate thin films. J. Appl. Phys., 1987, 62 (11), P. 4475–4481.

13. Rabson T.A., Baumann R.C., Rost T.A. Thin film lithium niobate on silicon. Ferroelectrics, 1990, 112 (1), P. 265–271.

14. Krupanidhi S.B., Mohan Rao G. Pulsed laser deposition of strontium titanate thin films for dynamic random access memory applications. Thin Solid Films, 1994, 249 (1), P. 100–108.

15. Pignolet A., Mohan Rao G., Krupanidhi S.B. Rapid thermal processed thin films of reactively sputtered Ta2O5. Thin Solid Films, 1995, 258 (1–2), P. 230–235.

16. Smith R.A. Wave Mechanics of Crystalline Solids. North Holland publication, Amsterdam, 1972.

17. Rubio J.D., Albella J.M., Martinez-Duart J.M. Sputtered Ta2O5 antireflecting coating for silicon solar cells. Thin Solid Films, 1982, 90 (4), P. 405–408.

18. Swanepoel S. Determination of the thickness and optical constants of amorphous silicon. J. Phys. E: Sci. Inst., 1983, 16 (12), P. 1214– 1222.

19. Landolt H., Bo¨rnstein R. et al. Numerical Data and Functional Relationships in Science and technology, 16, Group III, Crystal and Solid State Physics. Springer Verlag Berlin, Heidelberg-New York, 1981.

20. Raevskii I.P., Reznichenko L. Phase transitions and electrical properties of ferroelectric solid solution based on NaNbO3. Izestiva Akademii Nauk SSSR, Neorganicheskie Mater., 1979, 15 (5), P. 872–875.

21. Sze S.M. Physics of Semiconductor Devices. Wiley publication, New York, 2000.

22. Pankove J.J. Optical Processes in Semiconductors. Prentice Hall, New Jersey, 1956.

23. Sze S.M. Current transport and maximum dielectric strength of silicon nitride films. J. Appl. Phys., 1967, 38 (7), P. 2951–2955.

24. Kittel C. Solid State Physics. John Wiley and Sons, New York, 1970.

25. Michael S. Physics of Semiconductor Devices. Prentice Hall of India Pvt. Ltd., New Delhi, 1995.


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For citations:


Lingwal V., Kandari A.I., Panwar N.S. Optical properties of sodium niobate thin films. Nanosystems: Physics, Chemistry, Mathematics. 2016;7(4):583-591. https://doi.org/10.17586/2220-8054-2016-7-4-583-591

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