Preparation and characterization of porous silicon photoelectrode for dye sensitized solar cells
https://doi.org/10.17586/2220-8054-2016-7-4-629-632
Abstract
Nanostructured porous silicon (PS) samples were prepared by electrochemical anodic dissolution of doped silicon (p-Si) of (100) orientation at constant current density of 30 mA/cm2 for different etching times 10 and 60 min. The samples were characterized by XRD and SEM. The particle size was calculated from XRD using Scherrer’s approximation are in the range of 12 to 61 nm and the SEM images confirmed the difference in porosities of the sample. The samples were sensitized with chloroaluminium phthalocyanine (ClAlPc) to fabricate Dye-sensitized solar cells (DSSCs). The bandgaps from UV- Vis and photoluminescence measurements are in the range of 1.5 to 1.8 eV. The photocurrent and photovoltage of the cells were measured using Keithely source meter. The maximum conversion efficiency of 2.8% is observed and results are discussed.
Supporting agencies: The authors acknowledge the University Grant Commission (UGC), India, for financial support in the form of Major research project (F.No.41-941/2012 (SR)).
About the Authors
K. Gangadevi
Thiagarajar College
India
India
Department of Physics
Madurai–625009
K. Ramachandran
Madurai Kamaraj University
India
India
School of Physics
Madurai–625021
R. Srinivasan
Thiagarajar College
India
India
Department of Physics
Madurai–625009
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Review
For citations:
Gangadevi K., Ramachandran K., Srinivasan R. Preparation and characterization of porous silicon photoelectrode for dye sensitized solar cells. Nanosystems: Physics, Chemistry, Mathematics. 2016;7(4):629-632. https://doi.org/10.17586/2220-8054-2016-7-4-629-632
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