Observation of insulating and metallic-type behavior in Bi2Se3 transistor at room temperature
https://doi.org/10.17586/2220-8054-2016-7-3-565-568
Abstract
Topological insulators are a new class of electronic materials with promising device applications. In this work, multi-layer Bi2Se3 field effect transistors (FETs) are prepared by standard lithography followed by mechanical exfoliation method. Electrical characterization of the FET has been studied at room temperature. We observed both insulating and metallic-type transport behavior when device was gate-biased. Electron-phonon scattering plays a vital role in observing this behavior. We assume that this sort of behavior could be raised from the inherent metallic surface and semiconducting interior bulk properties of Bi2Se3.
About the Authors
V. GunasekaranJapan
2-1-1, Katahira, Aoba-ku, Sendai 980-8577
G. H. Park
Japan
2-1-1, Katahira, Aoba-ku, Sendai 980-8577
K. S. Kim
Japan
2-1-1, Katahira, Aoba-ku, Sendai 980-8577
M. Suemitsu
Japan
2-1-1, Katahira, Aoba-ku, Sendai 980-8577
H. Fukidome
Japan
2-1-1, Katahira, Aoba-ku, Sendai 980-8577
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Review
For citations:
Gunasekaran V., Park G.H., Kim K.S., Suemitsu M., Fukidome H. Observation of insulating and metallic-type behavior in Bi2Se3 transistor at room temperature. Nanosystems: Physics, Chemistry, Mathematics. 2016;7(3):565-568. https://doi.org/10.17586/2220-8054-2016-7-3-565-568