Investigation of the electron-phonon interaction in structures InAs/AlSb in quantization magnetic fields regime
Abstract
Study of transverse magnetoresistance oscillations ρxx(B) were performed for InAs/AlSb samples with different doping level at temperatures T=(4÷28)К. Based on test of magnetic field dependence amplitude ρxx(B) the formation dynamic of Landau quantization destruction was established. The components of the electron-electron and the electron-phonon interactions were marked out and the relaxation time τq(τee, τe−ph) evaluated. On the base of physical model of electron interaction the role of electron-phonon relaxation was revealed as a factor, which stabilize the process of Landau quantization destruction. Experimental nonlinear dependence τq(T) is explained by electron scattering on piezoelectric and deformation potential of acoustic phonons and channels competition inter-(intra-) subband scattering. Parametric dependence of quantum relaxation time from magnetic field τq ∝ B−0.6 was established.
About the Authors
M. M. AfanasovaRussian Federation
Afanasova Marina, senior staff scientist, doctor of physico-mathematical Sciences
390013, Ryazan, Dimitrova 3/2, 7
8(4912)983917
8(4912)280586
89109047199
V. A. Stepanov
Russian Federation
Stepanov Vladimir, professor, doctor of physico-mathematical Sciences
Ryazan, Svoboda, 46
8(4912)280586
8(4912)280586
89109047199
M. A. Korgavchikov
Russian Federation
Korgavchikov Maksim, Engineer
Ryazan, Svoboda, 46
8(4912)280586
8(4912)280586
89206317278
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Review
For citations:
Afanasova M.M., Stepanov V.A., Korgavchikov M.A. Investigation of the electron-phonon interaction in structures InAs/AlSb in quantization magnetic fields regime. Nanosystems: Physics, Chemistry, Mathematics. 2012;3(6):36-46. (In Russ.)