High pressure photoluminescence studies of diamond with GeV centers
https://doi.org/10.17586/2220-8054-2018-9-1-67-69
Abstract
We report low temperature (80 K) photoluminescence studies of microcrystalline diamond with germanium-vacancy (GeV) centers under hydrostatic pressure up to 6 GPa. Powders of Ge-doped diamond crystals were synthesized from hydrocarbons at high-pressures and high- temperatures. Due to the high quality of the samples, we were able to resolve the distinct quadruplet structure of the zero-phonon line (ZPL) of the GeV center already at 80 K and to trace it up to ∼ 6 GPa. The pressure dependence of ZPL was found to be linear with the pressure coefficient dE/dP = 3.1 meV/GPa, which is nearly 3 times higher than that for the isomorphic SiV− center. The experimentally observed pressure coefficients of GeV−, NV− and NV0 centers are compared with results of ab-initio DFT calculations, using Quantum ESPRESSO software package.
About the Authors
S. G. LyapinRussian Federation
Troitsk, Moscow
A. A. Razgulov
Russian Federation
Troitsk, Moscow
A. P. Novikov
Russian Federation
Troitsk, Moscow
E. A. Ekimov
Russian Federation
Troitsk, Moscow
M. V. Kondrin
Russian Federation
Troitsk, Moscow
Review
For citations:
Lyapin S.G., Razgulov A.A., Novikov A.P., Ekimov E.A., Kondrin M.V. High pressure photoluminescence studies of diamond with GeV centers. Nanosystems: Physics, Chemistry, Mathematics. 2018;9(1):67–69. https://doi.org/10.17586/2220-8054-2018-9-1-67-69