The memristive behavior of non-uniform strained carbon nanotubes
https://doi.org/10.17586/2220-8054-2018-9-1-76-78
Abstract
It is shown that the non-uniform elastic strain is the memristive switching origin in carbon nanotubes (CNT). The dependence of the resistance ratio in high- and low-resistance states of the non-uniformly strained CNT on the value strain is obtained. The process of the strain redistribution and its effect on the conductivity of CNT under action of the external electric field strength is studied. The obtained results can be used to develop memristor structures with reproducible parameters based on non-uniformly strained of carbon nanotubes.
Keywords
Supporting agencies: The results were obtained using the equipment of Research and Education Center and the Center for Collective Use “Nanotechnologies” of Southern Federal University. image This work was supported by the Russian Foundation for Basic Research (project No. 16-29-14023 ofi m) and by Southern Federal University (grant No. VnGr-07/2017-26).
About the Authors
M. V. Il’ina
Southern Federal University, Research and Education Center “Nanotechnologies”
Russian Federation
Russian Federation
Taganrog
O. I. Il’in
Southern Federal University, Research and Education Center “Nanotechnologies”
Russian Federation
Russian Federation
Taganrog
N. N. Rudyk
Southern Federal University, Research and Education Center “Nanotechnologies”
Russian Federation
Russian Federation
Taganrog
A. A. Konshin
Southern Federal University, Research and Education Center “Nanotechnologies”
Russian Federation
Russian Federation
Taganrog
O. A. Ageev
Southern Federal University, Research and Education Center “Nanotechnologies”
Russian Federation
Russian Federation
Taganrog
Review
For citations:
Il’ina M.V., Il’in O.I., Rudyk N.N., Konshin A.A., Ageev O.A. The memristive behavior of non-uniform strained carbon nanotubes. Nanosystems: Physics, Chemistry, Mathematics. 2018;9(1):76–78. https://doi.org/10.17586/2220-8054-2018-9-1-76-78
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