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Graphene on silicon carbide as a basis for gas- and biosensor applications

https://doi.org/10.17586/2220-8054-2018-9-1-95-97

Abstract

The structural, chemical, and electronic characteristics of graphene grown by thermal decomposition of a singlecrystal SiC substrate in Ar atmosphere are presented. It is shown that this technology allows the creation of high-quality monolayer graphene films with a small fraction of bilayer graphene inclusions. The performance of graphene on SiC as a gas sensor or a biosensor was tested. The sensitivity of gas sensors to NO2 on the order of 1 ppb and that of biosensors to fluorescein with concentration on the order of 1 ng/mL and to bovine serum albumin–fluorescein conjugate with concentration on the order of 1 ng/mL were determined.

About the Authors

S. P. Lebedev
Ioffe Institute
Russian Federation

St.Petersburg



V. Yu. Davydov
Ioffe Institute
Russian Federation

St.Petersburg



D. Yu. Usachov
Ioffe Institute
Russian Federation

St.Petersburg



A. N. Smirnov
Ioffe Institute
Russian Federation

St.Petersburg



V. S. Levitskii
Ioffe Institute
Russian Federation

St.Petersburg



I. A. Eliseyev
Ioffe Institute
Russian Federation

St.Petersburg



E. V. Guschina
Ioffe Institute
Russian Federation

St.Petersburg



M. S. Dunaevsckiy
Ioffe Institute
Russian Federation

St.Petersburg



O. Yu. Vilkov
Ioffe Institute
Russian Federation

St.Petersburg



A. G. Rybkin
Ioffe Institute
Russian Federation

St.Petersburg



A. A. Lebedev
Ioffe Institute
Russian Federation

St.Petersburg



S. N. Novikov
Ioffe Institute
Russian Federation

St.Petersburg



Yu. N. Makarov
Ioffe Institute
Russian Federation

St.Petersburg



Review

For citations:


Lebedev S.P., Davydov V.Yu., Usachov D.Yu., Smirnov A.N., Levitskii V.S., Eliseyev I.A., Guschina E.V., Dunaevsckiy M.S., Vilkov O.Yu., Rybkin A.G., Lebedev A.A., Novikov S.N., Makarov Yu.N. Graphene on silicon carbide as a basis for gas- and biosensor applications. Nanosystems: Physics, Chemistry, Mathematics. 2018;9(1):95–97. https://doi.org/10.17586/2220-8054-2018-9-1-95-97

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ISSN 2220-8054 (Print)
ISSN 2305-7971 (Online)