Surface electronic structure of TbIr2Si2 antiferromagnet
https://doi.org/10.17586/2220-8054-2025-16-4-467-471
Abstract
By means of ab initio density functional theory (DFT) calculations, we examined the surface electronic structure of the TbIr2Si2 antiferromagnet, which is distinguished by the out-of-plane alignment of Tb 4f moments and a high Neel temperature. We analyzed the interplay between the spin-orbit and exchange in- ´ teractions and their effect on the dispersion of surface states resided in the projected band gap around the M¯ point of the surface Brillouin zone, and compared our theoretical findings with low-temperature angle-resolved photoemission spectroscopy (ARPES) measurements.
Keywords
magnetic rare-earth intermetallic materials,
surface electronic structure,
density functional theory,
angle-resolved photoemission spectroscopy
Supporting agencies: The authors acknowledge support from the Saint-Petersburg State University (project 125022702939-2). D.A.P. and S.V.E. acknowledge support from the Government research assignment for ISPMS SB RAS (project FWRW-2022-0001)
About the Authors
D. A. Perminova
Institute of Strength Physics and Materials Science, Russian Academy of Sciences
Russian Federation
Russian Federation
634055 Tomsk, Russia
I. A. Shvets
St. Petersburg State University
Russian Federation
Russian Federation
199034 St. Petersburg, Russia
D. Yu. Usachov
St. Petersburg State University
Russian Federation
Russian Federation
199034 St. Petersburg, Russia
D. V. Vyalykh
St. Petersburg State University,
Russian Federation
Russian Federation
199034 St. Petersburg, Russia
S. V. Eremeev
Institute of Strength Physics and Materials Science, Russian Academy of Sciences;
St. Petersburg State University
Russian Federation
Russian Federation
634055 Tomsk, Russia
199034 St. Petersburg, Russia
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Review
For citations:
Perminova D.A., Shvets I.A., Usachov D.Yu., Vyalykh D.V., Eremeev S.V. Surface electronic structure of TbIr2Si2 antiferromagnet. Nanosystems: Physics, Chemistry, Mathematics. 2025;16(4):467-471. https://doi.org/10.17586/2220-8054-2025-16-4-467-471
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