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Negative differential resistance in gate all-around spin field effect transistors

https://doi.org/10.17586/2220-8054-2020-11-3-301-306

Abstract

In this paper, novel gate all-around spin field effect transistors (GAA Spin-FETs) with three different channel materials are proposed and their transport properties are presented. The three channel materials used are Indium Arsenide (InAs), Indium Phosphide (InP) and Aluminum Antimonide (AlSb). Based on the type of semiconducting channel, the results are obtained and a comparison of transport properties among these three FETs is made. The proposed device offers both advantages of reduced power dissipation and compact size. The results reveal that the negative differential resistance (NDR) is observed in all modeled devices and the peak to valley current ratio (PVCR) is different in all structures and is maximum in AlSb based field effect transistor. It is expected that these results will find enormous applications in analog electronics and in the design of oscillators. Additionally, the observed results in this study have great potential for the design of various logic gates and digitals circuits.

About the Authors

G.F.A. Malik
Department of Electronics and Instrumentation Technology, University of Kashmir
India

Srinagar-190006



M. A. Kharadi
Department of Electronics and Instrumentation Technology, University of Kashmir
India

Srinagar-190006



F. A. Khanday
Department of Electronics and Instrumentation Technology, University of Kashmir
India

Srinagar-190006



K. A. Shah
Department of Physics, S.P. College, Cluster University Srinagar
India

M.A. Road Srinagar-190001



N. Parveen
Islamia College of Science and Commerce
India

Srinagar, J&K



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For citations:


Malik G., Kharadi M.A., Khanday F.A., Shah K.A., Parveen N. Negative differential resistance in gate all-around spin field effect transistors. Nanosystems: Physics, Chemistry, Mathematics. 2020;11(3):301–306. https://doi.org/10.17586/2220-8054-2020-11-3-301-306

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ISSN 2220-8054 (Print)
ISSN 2305-7971 (Online)