Modification of nanoscale thermal oxide films formed on indium phosphide under the influence of tin dioxide
https://doi.org/10.17586/2220-8054-2020-11-1-110-116
Abstract
The kinetic parameters and the limiting stage of the defining process were established by studying the thermal oxidation of SnO2/InP heterostructures (thickness of SnO2 layer ∼ 50 nm). It was established that SnO2 does not have a chemical stimulating effect on the film growth rate; however, it is effective as a modifier of their structure and properties. SnO2 provides the formation of nanoscale films with semiconductor properties.
Supporting agencies: This research was supported by the Russian Foundation for Basic Research, grant No. 18-03-00354a. The research results were partially obtained on the equipment of the Collective Use Centre of Voronezh State University. URL: http://ckp.vsu.ru.
About the Authors
I. Ya. Mittova
Voronezh State University
Russian Federation
Russian Federation
Universitetskaya pl., Voronezh, 394018
V. F. Kostryukov
Voronezh State University
Russian Federation
Russian Federation
Universitetskaya pl., Voronezh, 394018
N. A. Ilyasova
Voronezh State University
Russian Federation
Russian Federation
Universitetskaya pl., Voronezh, 394018
B. V. Sladkopevtsev
Voronezh State University
Russian Federation
Russian Federation
Universitetskaya pl., Voronezh, 394018
A. A. Samsonov
Voronezh State University
Russian Federation
Russian Federation
Universitetskaya pl., Voronezh, 394018
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Review
For citations:
Mittova I.Ya., Kostryukov V.F., Ilyasova N.A., Sladkopevtsev B.V., Samsonov A.A. Modification of nanoscale thermal oxide films formed on indium phosphide under the influence of tin dioxide. Nanosystems: Physics, Chemistry, Mathematics. 2020;11(1):110–116. https://doi.org/10.17586/2220-8054-2020-11-1-110-116
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