Modification of nanoscale thermal oxide films formed on indium phosphide under the influence of tin dioxide
https://doi.org/10.17586/2220-8054-2020-11-1-110-116
Abstract
The kinetic parameters and the limiting stage of the defining process were established by studying the thermal oxidation of SnO2/InP heterostructures (thickness of SnO2 layer ∼ 50 nm). It was established that SnO2 does not have a chemical stimulating effect on the film growth rate; however, it is effective as a modifier of their structure and properties. SnO2 provides the formation of nanoscale films with semiconductor properties.
Supporting agencies: This research was supported by the Russian Foundation for Basic Research, grant No. 18-03-00354a. The research results were partially obtained on the equipment of the Collective Use Centre of Voronezh State University. URL: http://ckp.vsu.ru.
About the Authors
I. Ya. Mittova
Voronezh State University
Russian Federation
Russian Federation
Universitetskaya pl., Voronezh, 394018
V. F. Kostryukov
Voronezh State University
Russian Federation
Russian Federation
Universitetskaya pl., Voronezh, 394018
N. A. Ilyasova
Voronezh State University
Russian Federation
Russian Federation
Universitetskaya pl., Voronezh, 394018
B. V. Sladkopevtsev
Voronezh State University
Russian Federation
Russian Federation
Universitetskaya pl., Voronezh, 394018
A. A. Samsonov
Voronezh State University
Russian Federation
Russian Federation
Universitetskaya pl., Voronezh, 394018
References
1. Shikova T.G., Kholodkov I.V., Talanov E.N. An investigation of the properties of tin oxide films produced by thermal oxidation of the metal films. Physics and chemistry of materials processing, 2011, 3 (6), P. 88–92.
2. Krivetskiy V.V., Rumyantseva M.N., et al. Materials based on Modified SnO2 for Selective Gas Sensors. Inorganic Materials, 2010, 46 (10), P. 1218–1224.
3. Povarov V.G., Lopatnikov A.I. A simple multisensor detector based on tin dioxide in capillary gas chromatography. Journal of Analytical Chemistry, 2016, 71 (9), P. 940–945.
4. Rumyantseva M.N, Makeeva E.A., Gaskov A.M. The effect on the chemisorption of oxygen on their surface the microstructure of semiconductor sensors materials. Russian Journal of General Chemistry, 2008, 52 (2), P. 122–129.
5. Zhukova A.A., Rumyantseva M.N., et al. Influence of antimony doping on structure and conductivity of tin oxide whiskers. Thin Solid Films, 2009, 518, P. 1359–1362.
6. Nasheksky A.Ya. AIIIBV semiconductor phosphides and solid solutions based on it. Mir, Moscow, 1974, 154 p.
7. Turishchev S.Yu., Yurakov Yu.A., et al. Synchrotron Investigations of Oxides Formation in Tin Nanolayers. Journal of Surface Investigation: X-Ray, Synchrotron and Neutron Techniques, 2007, 1, P. 66–70.
8. Drozdov K.A., Krylov I.V., et al. Effect of the tin impurity on the energy spectrum photoelectric properties of nanostructured In2O3 films. Semiconductors, 2014, 48 (4), P. 467–470.
9. Amosova L.P. Electrooptical properties and structural features of amorphous ITO. Semiconductors, 2015, 49 (3), P. 414–418.
10. Yoon-Heung Tak, Ki-Beom Kim, et al. Criteria for ITO (indium–tin-oxide) thin film as the bottom electrode of an organic light emitting diode. Thin Solid Films, 2002, 411, P. 12–16.
11. Belobaba A.G., Zelinsky A.G., Gusev A.A., Masliy A.I. Electrochemical Stability of Indium-Tin Oxides. Chemistry for Sustainable Development, 2014, 22 (4), P. 417–422.
12. Rembeza S.I., Rembeza E.S., Voronov P.E., Sinelnikov B.M. Synthesis, structure and electrical properties of (SnO2)x(In2O3)1−x (x =0.5– 1) nanocomposites. Semiconductors, 2011, 45 (11), P. 1538–1541.
13. Ramasundari P., Ganeshan S., Vijayalakshmi R. Characterization studies on the novel mixed thin films. Nanosystems: Physics, Chemistry, Mathematics, 2016, 7 (4), P. 683–686.
14. Begletsova N.N., Al-Alwani A.J.K., et al. Influence of copper nanoparticle film processing temperature on their structure and electrical properties. Nanosystems: Physics, Chemistry, Mathematics, 2018, 9 (5), P. 586–596.
15. Gayathri A.G., Joseph C.M. Bistable electrical switching and performance of a pentacene-based write once/read many memory device. Nanosystems: Physics, Chemistry, Mathematics, 2016, 7 (4), P. 643–646.
16. Wang Yaqin, Tang Wu. Surface-dependent conductivity, transition type, and energy band structure in amorphous indium tin oxide films. Solid State Electronics, 2017, 138, 10.1016/j.sse.2017.09.007.
17. Glushko V.P. Thermodynamic properties of individual substances. 4. Nauka, Moscow, 1978, 386 p.
18. Mittova I.Ya. Influence of the Physicochemical Nature of Chemical Stimulators and the Way They are Introduced into a System on the Mechanism of the Thermal Oxidation of GaAs and InP. Inorganic Materials, 2014, 50 (9), P. 948–955.
19. Mittova I.Ya, Sladkopevtsev B.V., et al. Growth and Properties of Nanofilms Produced by the Thermal Oxidation of MnO2/InP under the Effect of Mn3(PO4)2. Inorganic Materials, 2019, 55 (9), P. 969–974.
20. Kim T.W., Lee D.U., Lee J.H., Yoon Y.S. Surface and microstructural properties of SnO2 thin films grown on p-InP (100) substrates at low temperature. Solid State Communications, 2000, 115, P. 503–507.
21. Shvets V.A., Spesivtsev E.V., Rykhlitskii S.V., Mikhailov N.N. Ellipsometry as a high-precision technique for subnanometer-resolved monitoring of thin-films structures. Nanotechnologies in Russia, 2009, 4 (3–4), P. 91–102.
22. Aspnes D.E. Optical properties of thin films. Thin solid films, 1982, 89, P. 249–262.
23. Tomina E.V., Mittova I.Ya., Zelenina L.S. Thermal Oxidation as a Method of formation of Nanoscale Functional Films on AIIIBV Semiconductors: Influence of Deposited Metal Layers. Overview. Condensed Matter and Interphases, 2018, 20 (1), P. 6–24.
24. Mittova I.Ya., Tomina E.V., et al. High-speed determination of the thickness and spectral ellipsometry investigation of films produced by the thermal oxidation of InP and VxOy/InP structures. Inorganic Materials, 2013, 49 (2), P. 173–179.
25. Mittova I.Ya., Sladkopevtsev B.V., et al. Formation of nanoscale films of the (Y2O3–Fe2O3) on the monocrystal InP. Condensed Matter and Interphases, 2019, 21 (3), P. 406–418.
26. Synowicki R.A. Spectroscopic ellipsometry characterization of indium tin oxide film microstructure and optical constants. Thin Solid Films, 1998, 46 (20), P. 394–397.
27. Mittova I.Ya., Borzakova G.V., et al. Growth of Oxide Layers on Indium Phosphide. Inorganic Materials, 2012, 48 (2), P. 161–168.
28. Thilakan P., Kumar J. Reactive thermal oxidation of indium oxide and tin-doped indium oxide thin films on InP substrates. Thin Solid Films, 1997, 292, P. 50–54.
29. Mittova I.Ya., Tomina E.V., Tretyakov N.N., Sladkopevtsev B.V. Dependence of the Mechanism of V2O5 Chemostimulating Action from the Method of its Introduction into the System during InP Thermal Oxidation. Condensed Matter and Interphases, 2013, 15 (3), P. 305–311.
30. Kovtunenko P.V., Nesterova I.L., Knunyants I.L. Chemical Encyclopedia. Great Russian Encyclopedia, Moscow, 1992, 639 p.
Review
For citations:
Mittova I.Ya., Kostryukov V.F., Ilyasova N.A., Sladkopevtsev B.V., Samsonov A.A. Modification of nanoscale thermal oxide films formed on indium phosphide under the influence of tin dioxide. Nanosystems: Physics, Chemistry, Mathematics. 2020;11(1):110–116. https://doi.org/10.17586/2220-8054-2020-11-1-110-116
Views:
1
Email this article 