Temperature dependence of recombination radiation in semiconductor nanostructures with quantum dots containing impurity complexes

Abstract

Temperature dependence of the spectral intensity of recombination radiation in a quasi-zero-dimensional structure, containing impurity complexes “A⁺+e” (a hole localized on a neutral acceptor, interacting with an electron localized in the ground state of a quantum dot), has been investigated in an external electric field in the presence of tunneling decay of a quasistationary A⁺-state. Probability of dissipative tunneling of a hole has been calculated in the one-instanton approximation, and the influence of tunneling decay and of an external electric field on the A⁺-state binding energy and on the spectra of recombination radiation, associated with the optical transition of an electron from the ground state of a quantum dot to the A⁺-state of the impurity center, has been investigated in the adiabatic approximation. “Dips” in the temperature dependence of the SIRR have been revealed, which are associated with the presence of resonant tunneling at certain values of temperature and strength of the external electric field, for which the double-well oscillatory potential becomes symmetric.