For citations:
Atamuratov A.E., Abdikarimov A., Khalilloev M., Atamuratova Z.A., Rahmanov R., Garcia-Loureiro A., Yusupov A. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes. Nanosystems: Physics, Chemistry, Mathematics. 2017;8(1):71-74. https://doi.org/10.17586/2220-8054-2017-8-1-71-74
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