Methodology of analyzing the InSb semiconductor quantum dots parameters
https://doi.org/10.17586/2220-8054-2019-10-6-720-724
Abstract
The investigation of indium antimonide quantum dots has been carried out by the methods of differential normalized tunnel current-voltage characteristics, electron microscopy, particle size analysis and spectral dependence of the absorption coefficient. Qualitatively and quantitatively consistent measurement results were obtained with an error less than 15 %. It is concluded that the analysis of normalized differential tunnel current-voltage characteristics is an effective method of express-analysis that can be used in investigation of quantum-sized objects properties.
Keywords
quantum dots,
indium antimonide,
differential tunnel current-voltage characteristics,
energy spectrum
Supporting agencies: This work was supported by grants from the Russian Foundation for Basic Research Projects No. 19-07-00087 and No. 19-07-00086
About the Authors
A. I. Mikhailov
Saratov State University
Russian Federation
Russian Federation
Department of Nanoand Biomedical Technologies
Astrakhanskaya, 83, Saratov, 410012
V. F. Kabanov
Saratov State University
Russian Federation
Russian Federation
Department of Nanoand Biomedical Technologies
Astrakhanskaya, 83, Saratov, 410012
M. V. Gavrikov
Saratov State University
Russian Federation
Russian Federation
Department of Nanoand Biomedical Technologies
Astrakhanskaya, 83, Saratov, 410012
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Review
For citations:
Mikhailov A.I., Kabanov V.F., Gavrikov M.V. Methodology of analyzing the InSb semiconductor quantum dots parameters. Nanosystems: Physics, Chemistry, Mathematics. 2019;10(6):720-724. https://doi.org/10.17586/2220-8054-2019-10-6-720-724
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