Methodology of analyzing the InSb semiconductor quantum dots parameters
https://doi.org/10.17586/2220-8054-2019-10-6-720-724
Аннотация
The investigation of indium antimonide quantum dots has been carried out by the methods of differential normalized tunnel current-voltage characteristics, electron microscopy, particle size analysis and spectral dependence of the absorption coefficient. Qualitatively and quantitatively consistent measurement results were obtained with an error less than 15 %. It is concluded that the analysis of normalized differential tunnel current-voltage characteristics is an effective method of express-analysis that can be used in investigation of quantum-sized objects properties.
Об авторах
А. I. Mikhailov
Saratov State University
Россия
Россия
Department of Nanoand Biomedical Technologies
Astrakhanskaya, 83, Saratov, 410012
V. F. Kabanov
Saratov State University
Россия
Россия
Department of Nanoand Biomedical Technologies
Astrakhanskaya, 83, Saratov, 410012
М. V. Gavrikov
Saratov State University
Россия
Россия
Department of Nanoand Biomedical Technologies
Astrakhanskaya, 83, Saratov, 410012
Список литературы
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Рецензия
Для цитирования:
Mikhailov А.I., Kabanov V.F., Gavrikov М.V. Methodology of analyzing the InSb semiconductor quantum dots parameters. Наносистемы: физика, химия, математика. 2019;10(6):720-724. https://doi.org/10.17586/2220-8054-2019-10-6-720-724
For citation:
Mikhailov A.I., Kabanov V.F., Gavrikov M.V. Methodology of analyzing the InSb semiconductor quantum dots parameters. Nanosystems: Physics, Chemistry, Mathematics. 2019;10(6):720-724. https://doi.org/10.17586/2220-8054-2019-10-6-720-724
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