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Simulation of secondary electron transport in thin metal and fullerite films

Abstract

Excitation processes and transport of recoiled and secondary electrons generated in fullerite and metal films under photons and electron irradiation were studied by computer simulation. Studied processes resulting in polymerization of fullerite were considered as the basic ones in formation of a pixel in electron nanolithography with fullerite film as an electron-beam resist. Reliability of the computer model and the important role of secondary electrons in the process of pixel formation were confirmed by comparison of the sizes of the calculated secondary electron swarm and the experimental cluster-pixel obtained previously. The photoelectron yield dependence on the incident photon’s energy was also obtained with the same computer model for metal foils which can be used as a radiation strip-detector.

About the Authors

E. O. Petrenko
Kiev institute for Nuclear research NAS of Ukraine
Ukraine

Nauky av., 47, Kiev



M. V. Makarets
Taras Shevchenko National University of Kyiv
Ukraine

Phys. Dep. Akad. Glushkov av. 4, Kiev, 03022



V. M. Mikoushkin
Ioffe Institute
Ukraine

194021, St. Petersburg



V. M. Pugach
Kiev institute for Nuclear research NAS of Ukraine
Ukraine

Nauky av., 47, Kiev



References

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Review

For citations:


Petrenko E.O., Makarets M.V., Mikoushkin V.M., Pugach V.M. Simulation of secondary electron transport in thin metal and fullerite films. Nanosystems: Physics, Chemistry, Mathematics. 2014;5(1):81-85.

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ISSN 2220-8054 (Print)
ISSN 2305-7971 (Online)