Simulation of secondary electron transport in thin metal and fullerite films
Аннотация
Excitation processes and transport of recoiled and secondary electrons generated in fullerite and metal films under photons and electron irradiation were studied by computer simulation. Studied processes resulting in polymerization of fullerite were considered as the basic ones in formation of a pixel in electron nanolithography with fullerite film as an electron-beam resist. Reliability of the computer model and the important role of secondary electrons in the process of pixel formation were confirmed by comparison of the sizes of the calculated secondary electron swarm and the experimental cluster-pixel obtained previously. The photoelectron yield dependence on the incident photon’s energy was also obtained with the same computer model for metal foils which can be used as a radiation strip-detector.
Об авторах
E. Petrenko
Kiev institute for Nuclear research NAS of Ukraine
Украина
Украина
M. Makarets
Taras Shevchenko National University of Kyiv
Украина
Украина
V. Mikoushkin
Ioffe Institute
Украина
Украина
V. Pugach
Kiev institute for Nuclear research NAS of Ukraine
Украина
Украина
Список литературы
1. Makarets M.V., Petrenko E.O., Pugatch V.M. Accumulation of charge on metal strip detector under ion beam: experiment and simulation. J. Nuclear Physics and Atomic Energy, 13, P. 146–152 (2012).
2. Mikoushkin V.M., Shnitov V.V. Electron beam-induced fullerite structure transformation, Phys. Solid State, 39 (1), P. 164–167 (1997).
3. Snitov V.V., Mikoushkin V.M., Gordeev Yu.S. Fullerite C60 as electron-beam resist for ”dry” nanolithography. Microelectron. Engin., 69 (2–4), P. 429–435 (2003).
4. Makarets N.V., Prylutskyy Yu.I., et al. Simulation of fullerite C60 polimerisation under particle beams irradiation. Mol. Cryst. & Liquid Cryst., 426, P. 171–178 (2005).
5. Petrenko E.O., Makarets N.V., Mikoushkin V.M. Simulation of fast electron transport in thin fullerite C60 films. Fullerenes, Nanotubes and Carbon Nanostructures, 20 (4–7), P. 378–381 (2012).
6. Nevedomsky V.N., Mikoushkin V.M., et al. The role of secondury electrons in forming the image of electron nanoprobe. Fullerenes, Nanotubes and Carbon nanostructures, 16 (5–6), P. 682–686 (2008).
7. Penn D. Electron mean-free-paths calculation using a model dielectric function. Phys. Rev. B, 35, P. 482–486 (1987).
8. Thomas C., Rehm G. Short Report on New XBPM tested on B16. Doc No: TDI-DIA-OPT-0011, July 1, 2011.
Рецензия
Для цитирования:
, , , . Наносистемы: физика, химия, математика. 2014;5(1):81-85.
For citation:
Petrenko E.O., Makarets M.V., Mikoushkin V.M., Pugach V.M. Simulation of secondary electron transport in thin metal and fullerite films. Nanosystems: Physics, Chemistry, Mathematics. 2014;5(1):81-85.
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