Effect of the mild method of formation VxOy/InP structures using V2O5 gel on the process of their oxidation and composition of nanosized oxide films
Abstract
A VxOy/InP structure was formed by the deposition of a V2O5 gel aerosol on an InP surface, followed by thermal annealing. This approach avoids chemostimulator interactions with the substrate prior to thermal oxidation, which is characteristic of ‘hard’ methods of chemostimulator deposition. The oxidation process of such structures occurs in the transit mechanism with a slight increase growth rate of films by 20–40 % in comparison with the oxidation of InP. The transit action of chemostimulator has been associated with the chemical bonding of V2O5 into InVO4 (XRD), which predominates over mutual transformations of vanadium oxide, which forms in different oxidation states.
Supporting agencies: This work was supported by the Ministry of Education and Science of the Russian Federation in line with government order for Higher Education Institutions in the field of science for 2014-2016 years (project No. 673) and by RFBR grant No. 13-03-00705-a.
About the Authors
I. A. Mittova
Voronezh State University
Russian Federation
Russian Federation
Voronezh
E. V. Tomina
Voronezh State University
Russian Federation
Russian Federation
Voronezh
B. V. Sladkopevtcev
Voronezh State University
Russian Federation
Russian Federation
Voronezh
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Review
For citations:
Mittova I.A., Tomina E.V., Sladkopevtcev B.V. Effect of the mild method of formation VxOy/InP structures using V2O5 gel on the process of their oxidation and composition of nanosized oxide films. Nanosystems: Physics, Chemistry, Mathematics. 2014;5(2):307–314.
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