Influence of the oxidation of GaAs on the work of light-emitting spintronic diodes with InGaAs/GaAs quantum wells
https://doi.org/10.17586/2220-8054-2015-6-6-875-881
Abstract
A study of oxygen atoms’ interactions on a GaAs (001) structure surface shows that these atoms are getting adsorbed onto the surface, form an oxide layer, and over time its thickness increases. This oxide layer hinders the injection of electrons and the holes from the metal layer to the semiconductor, thus affecting the photoelectroluminescence and the work of Metal-oxide-semiconductor diodes. These studies also examine the growth rate of oxide layers on the surface of the structure with different deposition degrees (400 ◦C, 630 ◦C) of cover layers and the extent of the oxygen atoms’ penetration into the structure.
About the Author
S. Saeid
Lobachevsky State University of Nizhni Novgorod, 23 Gagarin Avenue
Russian Federation
Russian Federation
Nizhny Novgorod, 603950
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Review
For citations:
Saeid S. Influence of the oxidation of GaAs on the work of light-emitting spintronic diodes with InGaAs/GaAs quantum wells. Nanosystems: Physics, Chemistry, Mathematics. 2015;6(6):875-881. https://doi.org/10.17586/2220-8054-2015-6-6-875-881
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