Investigation of structure and transport properties of graphene grown by low-pressure no flow CVD on polycrystalline Ni films
Abstract
Graphene films were synthesized by the low-pressure no flow CVD on polycrystalline nickel catalyst films grown by the self-ion assisted deposition technique at different biases. Graphene films were transferred to a SiO2/Si substrate using PMMA. The graphene grown on Ni films with bimodal grain size distribution and weaker (111) texture had higher thickness uniformity and a lower number of graphene layers. The graphene grown on Ni films with a monomodal grain size distribution and stronger (111) texture had lower thickness uniformity and a higher number of graphene layers. The transport properties of the graphene films were investigated with the aid of Hall measurements.
About the Authors
O. V. KononenkoRussian Federation
Chernogolovka
V. N. Matveev
Russian Federation
Chernogolovka
D. P. Field
United States
Pullman
D. V. Matveev
Russian Federation
Chernogolovka
S. I. Bozhko
Russian Federation
Chernogolovka
D. V. Roshchupkin
Russian Federation
Chernogolovka
E. E. Vdovin
Russian Federation
Chernogolovka
A. N. Baranov
Russian Federation
Moscow
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Review
For citations:
Kononenko O.V., Matveev V.N., Field D.P., Matveev D.V., Bozhko S.I., Roshchupkin D.V., Vdovin E.E., Baranov A.N. Investigation of structure and transport properties of graphene grown by low-pressure no flow CVD on polycrystalline Ni films. Nanosystems: Physics, Chemistry, Mathematics. 2014;5(1):117-122.