Channels of electron-electron interactions in highly doped heterojunction
Abstract
Electron-electron interactions in a single highly doped heterojunction are considered, taking into account both intra- and intersubband transitions. Expressions are derived for the time of electron-electron interaction, matrix elements of the full screening potential and dynamic dielectric function in a 2D electron system with the fine structure of the energy spectrum, and for the electron density spatial distribution. The theoretical dependences τ th ee (T, ns) provide a good description of the experimental times of Landau levels collisional broadening τ exp q (T, ns).
About the Authors
V. A. Ambartsumyan
Ryazan State Radioengineering University
Russian Federation
Russian Federation
Ryazan
E. A. Andryushchenko
Ryazan State Radioengineering University
Russian Federation
Russian Federation
Ryazan
K. V. Bukhenskyy
Ryazan State Radioengineering University
Russian Federation
Russian Federation
Ryazan
A. B. Dubois
Ryazan State Radioengineering University
Russian Federation
Russian Federation
Ryazan
E. A. Dvoretskova
Ryazan State Radioengineering University
Russian Federation
Russian Federation
Ryazan
T. V. Gordova
Moscow State University of Economics, Statistics and Informatics (Ryazan filial)
Russian Federation
Russian Federation
N. I. Ivanova
Moscow State University of Economics, Statistics and Informatics (Yaroslavl filial)
Russian Federation
Russian Federation
S. I. Kucheryavyy
Institute of Atomic Energy of National Research Nuclear University of Moscow Engineer-Physics University
Russian Federation
Russian Federation
Obninsk
S. N. Mashnina
Moscow State University of Economics, Statistics and Informatics (Ryazan filial)
Russian Federation
Russian Federation
A. S. Safoshkin
Ryazan State Radioengineering University
Russian Federation
Russian Federation
Ryazan
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Review
For citations:
Ambartsumyan V.A., Andryushchenko E.A., Bukhenskyy K.V., Dubois A.B., Dvoretskova E.A., Gordova T.V., Ivanova N.I., Kucheryavyy S.I., Mashnina S.N., Safoshkin A.S. Channels of electron-electron interactions in highly doped heterojunction. Nanosystems: Physics, Chemistry, Mathematics. 2014;5(3):343-353.
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