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| Issue | Title | |
| Vol 8, No 1 (2017) | Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate | Abstract PDF (Eng) similar documents |
| A. E. Atamuratov, M. Khalilloev, A. Abdikarimov, Z. A. Atamuratova, M. Kittler, R. Granzner, F. Schwierz | ||
| "... Short channel effects such as DIBL are compared for trigate SOI Junctionless MOSFET with extended ..." | ||
| Vol 16, No 3 (2025) | Influence of SiC MOSFET design on on-resistance and breakdown voltage | Abstract PDF (Eng) similar documents |
| O. B. Chukanova, K. A. Tsarik | ||
| "... To improve the efficiency of circuits including SiC MOSFET, it is necessary to increase ..." | ||
| Vol 13, No 2 (2022) | Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET | Abstract PDF (Eng) similar documents |
| A. E. Atamuratov, B. O. Jabbarova, M. M. Khalilloev, A. . Yusupov, K. . Sivasankaran, J. C. Chedjou | ||
| "... in nanoscale junctionless Fin Field Effect Transistor through numerical simulation. The role of back oxide ..." | ||
| 1 - 3 of 3 Items | ||
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