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| Issue | Title | |
| Vol 16, No 3 (2025) | Influence of SiC MOSFET design on on-resistance and breakdown voltage | Abstract PDF (Eng) similar documents |
| O. B. Chukanova, K. A. Tsarik | ||
| "... To improve the efficiency of circuits including SiC MOSFET, it is necessary to increase ..." | ||
| Vol 16, No 2 (2025) | Simulation of a quasi-ballistic quantum-barrier field-effect transistor based on GaAs quantum wire | Abstract PDF (Eng) similar documents |
| D. V. Pozdnyakov, A. V. Borzdov, V. M. Borzdov | ||
| "... A new constructive solution of field-effect transistor (FET) with a Schottky barrier ..." | ||
| Vol 7, No 1 (2016): Special Issue: Proceedings of the 12th Biennial International Conference “Advanced Carbon Nanostructures” (ACNS’2015) | Growth, study, and device application prospects of graphene on SiC substrates | Abstract PDF (Eng) similar documents |
| A. A. Lebedev | ||
| "... of graphene applications includes development of field-effect transistors for digital and analog electronics ..." | ||
| Vol 8, No 1 (2017) | Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate | Abstract PDF (Eng) similar documents |
| A. E. Atamuratov, M. Khalilloev, A. Abdikarimov, Z. A. Atamuratova, M. Kittler, R. Granzner, F. Schwierz | ||
| "... Short channel effects such as DIBL are compared for trigate SOI Junctionless MOSFET with extended ..." | ||
| Vol 2, No 3 (2011) | The modeling of SiC phases on basis of nanostructures | Abstract similar documents |
| E. A. Belenkov, E. N. Agalyamova, V. A. Greshnyakov | ||
| "... существование двадцати одной SiC-фазы, атомы в которых находятся в кристаллографически эквивалентных состояниях ..." | ||
| Vol 7, No 3 (2016) | Observation of insulating and metallic-type behavior in Bi2Se3 transistor at room temperature | Abstract PDF (Eng) similar documents |
| V. Gunasekaran, G. H. Park, K. S. Kim, M. Suemitsu, H. Fukidome | ||
| "... . In this work, multi-layer Bi2Se3 field effect transistors (FETs) are prepared by standard lithography followed ..." | ||
| Vol 4, No 6 (2013) | A quantitative model for quantum transport in nano-transistors | Abstract PDF (Eng) similar documents |
| U. Wulf, M. Krahlisch, J. Kučera, H. Richter, J. Höntschel | ||
| "... in a nanotransistor was developed yielding qualitative agreement with the trace of an experimental transistor. To make ..." | ||
| Vol 11, No 3 (2020) | Negative differential resistance in gate all-around spin field effect transistors | Abstract PDF (Eng) similar documents |
| G.F.A. Malik, M. A. Kharadi, F. A. Khanday, K. A. Shah, N. Parveen | ||
| "... In this paper, novel gate all-around spin field effect transistors (GAA Spin-FETs) with three ..." | ||
| Vol 15, No 4 (2024) | Phase formation of nanosized InGaZnO4 obtained by the sol-gel method with different chelating agents. | Abstract PDF (Eng) similar documents |
| G. M. Zirnik, A. S. Chernukha, D. A. Uchaev, I. A. Solizoda, S. A. Gudkova, N. S. Nekorysnova, D. A. Vinnik | ||
| "... (IGZO), will make it possible to use it for the transistors manufacture using printing methods. The sol ..." | ||
| Vol 9, No 4 (2018) | Heat-treated nano-structured shungite rocks and electrophysical properties associated | Abstract PDF (Eng) similar documents |
| S. V. Kovalevskii, I. A. Moshnikov, V. V. Kovalevski | ||
| "... to the untreated sample. In contrast, the treated shungite rock with high SiC nanofiber content is characterized ..." | ||
| Vol 6, No 6 (2015) | The lateral capacitance of nanometer MNOSFET with a single charge trapped in oxide layer or at SiO2 - SI3 N4 interfaceat | Abstract PDF (Eng) similar documents |
| A. E. Atamuratov, U. A. Aminov, Z. A. Atamuratova, M. Halillaev, A. Abdikarimov, H. Matyakubov | ||
| "... substrate surface of the nanometer n-channel Metal-Nitride-Oxide-Semiconductor Field Effect Transistor ..." | ||
| Vol 9, No 1 (2018) | Graphene on silicon carbide as a basis for gas- and biosensor applications | Abstract PDF (Eng) similar documents |
| S. P. Lebedev, V. Yu. Davydov, D. Yu. Usachov, A. N. Smirnov, V. S. Levitskii, I. A. Eliseyev, E. V. Guschina, M. S. Dunaevsckiy, O. Yu. Vilkov, A. G. Rybkin, A. A. Lebedev, S. N. Novikov, Yu. N. Makarov | ||
| "... decomposition of a singlecrystal SiC substrate in Ar atmosphere are presented. It is shown that this technology ..." | ||
| Vol 13, No 2 (2022) | Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET | Abstract PDF (Eng) similar documents |
| A. E. Atamuratov, B. O. Jabbarova, M. M. Khalilloev, A. . Yusupov, K. . Sivasankaran, J. C. Chedjou | ||
| "... in nanoscale junctionless Fin Field Effect Transistor through numerical simulation. The role of back oxide ..." | ||
| Vol 7, No 6 (2016) | Development of the orbital-free approach for hetero-atomic systems | Abstract PDF (Eng) similar documents |
| V. G. Zavodinsky, O. A. Gorkusha | ||
| "... of single atoms and then calculated kinetic functions for some atomic complexes. For the examples of SiC ..." | ||
| 1 - 14 of 14 Items | ||
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