The lateral capacitance of nanometer MNOSFET with a single charge trapped in oxide layer or at SiO2 - SI3 N4 interfaceat
https://doi.org/10.17586/2220-8054-2015-6-6-837-842
Abstract
In this work the dependence between the position of single charge trapped in an oxide layer or at SiO2 { Si3N4 interface and the concentration distribution of charge carriers on a semiconductor substrate surface of the nanometer n-channel Metal-Nitride-Oxide-Semiconductor Field Effect Transistor (MNOSFET) and p-channel MNOSFET with n+ drain area is studied. It is shown that the lateral capacitances of nanometer MNOSFET depend on the position of single charge in oxide or at interface. This dependence allows one to estimate the position of trapped charges along the channel of transistor.
About the Authors
A. E. Atamuratov
Urganch Branch of Tashkent University of Information Technologies
Uzbekistan
Uzbekistan
Tashkent
U. A. Aminov
Urganch State University
Uzbekistan
Uzbekistan
Tashkent
Z. A. Atamuratova
Urganch State University
Uzbekistan
Uzbekistan
Tashkent
M. Halillaev
Urganch State University
Uzbekistan
Uzbekistan
Tashkent
A. Abdikarimov
Urganch State University
Uzbekistan
Uzbekistan
Tashkent
H. Matyakubov
Urganch State University
Uzbekistan
Uzbekistan
Tashkent
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Review
For citations:
Atamuratov A.E., Aminov U.A., Atamuratova Z.A., Halillaev M., Abdikarimov A., Matyakubov H. The lateral capacitance of nanometer MNOSFET with a single charge trapped in oxide layer or at SiO2 - SI3 N4 interfaceat. Nanosystems: Physics, Chemistry, Mathematics. 2015;6(6):837-842. https://doi.org/10.17586/2220-8054-2015-6-6-837-842
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