For citations:

Atamuratov A.E., Aminov U.A., Atamuratova Z.A., Halillaev M., Abdikarimov A., Matyakubov H. The lateral capacitance of nanometer MNOSFET with a single charge trapped in oxide layer or at SiO₂ - SI₃ N₄ interfaceat. Nanosystems: Physics, Chemistry, Mathematics. 2015;6(6):837-842. https://doi.org/10.17586/2220-8054-2015-6-6-837-842