Electrical properties of hot wall deposited PbTe–SnTe thin films
Аннотация
Polycrystalline Pb1−xSnxTe (0.0 ≤ x ≤ 1.0) telluride alloys were synthesized by the direct fusion technique. Thin films of these materials were prepared by a hot wall deposition method on glass substrates at Tsub =230–330 ◦C and in a vacuum of about 10−5 Torr. The microstructure of the films was characterized by XRD, SEM, EDX and AES. The films showed a natural cubic structure. The thin films’ microstructure consisted of densely packed grains with dimensions of 50–300 nm and crystallite growth direction is perpendicular to substrate plane. The as-grown Pb1−xSnxTe films showed p-type conductivity. Thermoelectric measurements of the films showed high values for the room-temperature Seebeck coefficient ranging, from 20 to 400 µV·K−1, for SnTe to PbTe thin films, respectively. The conductivity of the films was in the range of 3·101–1·104 Ω−1·cm−1.
Об авторах
V. Ivanov
State Scientific and Production Association “Scientific-Practical Materials Research Centre of the National Academy of Sciences of Belarus
Беларусь
Беларусь
V. Gremenok
State Scientific and Production Association “Scientific-Practical Materials Research Centre of the National Academy of Sciences of Belarus
Беларусь
Беларусь
H. Seidi
State Scientific and Production Association “Scientific-Practical Materials Research Centre of the National Academy of Sciences of Belarus
Беларусь
Беларусь
S. Zimin
Yaroslavl State University
Россия
Россия
E. Gorlachev
Yaroslavl State University
Россия
Россия
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Рецензия
Для цитирования:
, , , , . Наносистемы: физика, химия, математика. 2013;4(6):816-822.
For citation:
Ivanov V.A., Gremenok V.F., Seidi H.G., Zimin S.P., Gorlachev E.S. Electrical properties of hot wall deposited PbTe–SnTe thin films. Nanosystems: Physics, Chemistry, Mathematics. 2013;4(6):816-822.
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