Bistable electrical switching and performance of a pentacene-based write once/read many memory device
https://doi.org/10.17586/2220-8054-2016-7-4-643-646
Abstract
In this paper, the performance of a pentacene-based write once/read many memory device is reported. The IV characteristics of a pentacene device deposited at 5 A˚ /s on an ITO-coated glass substrate was studied. This device showed a stable switching from ON to OFF state with an ON-OFF current ratio of nearly 103 and a retention time of 5 × 104 s with a switching threshold voltage of 3.9 V. The irreversible switching of this device makes it suitable for write once/read many memory devices. The structural studies of pentacene thin films on glass substrate were also done and the dependence of device performance on grain size is reported. Improved performance of this device due to the addition of C60 layer is also discussed.
Supporting agencies: Financial support by Visvesvaraya Technological University (VTU), Belgaum, Karnataka, India through a grant is gratefully acknowledged. Financial support by Vision Group on Science and Technology (VGST), Department of Information Technology, Biotechnology & Science and Technology, Government of Karnataka, India through a CISE grant is also acknowledged.
About the Authors
A. G. Gayathri
Dayananda Sagar College of Engg
India
India
Department of Physics
Shavige malleswara Hills, Kumaraswamy layout, Bangalore-560076
C. M. Joseph
Dayananda Sagar College of Engg
India
India
Department of Physics
Shavige malleswara Hills, Kumaraswamy layout, Bangalore-560076
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Review
For citations:
Gayathri A.G., Joseph C.M. Bistable electrical switching and performance of a pentacene-based write once/read many memory device. Nanosystems: Physics, Chemistry, Mathematics. 2016;7(4):643-646. https://doi.org/10.17586/2220-8054-2016-7-4-643-646
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