Chemosynthesis, characterization and PEC performance of CdZn(SSe)2 thin films by arrested precipitation technique (APT)
https://doi.org/10.17586/2220-8054-2016-7-3-523-527
Abstract
In the present work, we have used simple, cost effective arrested precipitation technique (APT) to deposit CdZn(SSe)2 thin films. Preparative conditions were optimized during the initial stage of experimentation to obtain good quality CdZn(SSe)2 thin films. The as-deposited film was studied for its structural, morphological, optical, and compositional analysis by XRD, SEM, UV-Vis-NIR spectrophotometer and EDSanalysis techniques respectively. XRD analysis revealed that the film was polycrystalline in nature and exhibit hexagonal crystal structure. The SEM micrograph shows the formation of spherical surface morphology. EDS results confirm the presence of Cd, Zn, S and Se elements in the synthesized thin film. The band gap value of thin film was calculated from the absorption spectra which is found to be 1.8 eV. From J–V measurements, photo-conversion efficiency is found to be 0.07%.
About the Authors
S. K. Jagadale
Materials Research Laboratory, Department of Chemistry, Shivaji University
India
India
Kolhapur-416004
D. B. Shinde
Materials Research Laboratory, Department of Chemistry, Shivaji University
India
India
Kolhapur-416004
R. M. Mane
Materials Research Laboratory, Department of Chemistry, Shivaji University
India
India
Kolhapur-416004
K. V. Khot
Materials Research Laboratory, Department of Chemistry, Shivaji University
India
India
Kolhapur-416004
V. B. Ghanwat
Materials Research Laboratory, Department of Chemistry, Shivaji University
India
India
Kolhapur-416004
P. N. Bhosale
Materials Research Laboratory, Department of Chemistry, Shivaji University
India
India
Kolhapur-416004
R. K. Mane
Materials Research Laboratory, Department of Chemistry, Shivaji University
India
India
Kolhapur-416004
References
1. Chavan S., Sharma R., New trends to grow the n-CdZn(S1−xSex)2/p-CuIn(S1−xSex)2 heterojunctionthin films for solar cell applications. Sol. Energ. Mat. Sol. Cells, 2006, 90(9), P. 1241–1253.
2. Sharma M., Kumar S., Sharma L. M., Sharma T. P., Husain M., CdS sintered films: growth and characteristics. Physica B: Condensed Matter, 2004, 348, P. 15–20.
3. Chandramohan R., Mahalingam T., Chu J.P., Sebastian P.J., Preparation and characterization of semiconducting Zn1−xCdxSe thin films. Sol. Energ. Mat. Sol. Cells, 2004, 81, P. 371–378.
4. Chavhan S.D., Senthilarasu S., Lee S.H., Annealing effect on the structural and optical properties of a Cd1−xZnxS thin film for photovoltaic application. App. Surf. Sci., 2008, 254, P. 45439–45445.
5. Ilican S., Zor M., Caglar,Y., Caglar M., Optical characterization of the CdZn(S1−xSex)2thn films deposited by spray pyrolysis method. Optica Applicata, 2006, 36 (1)
6. Pathan H.M., Lokhande C.D., Deposition of metal chalcogenide thin films by successive ionic layer dsorption and reaction (SILAR) method. Bull. Mater. Sci., 2004, 27, P. 85–111.
7. SubbaiahVenkata Y.P., Pratap P., Reddy Ramkrishna K.T., Miles R.W., Yi J., Studies on ZnS0.5Se0.5 buffer based thin film solar cells. Thin solid films, 2008, 516, P. 7060–7064.
8. Bagade C.S., Mali S.S., Ghanwat V.B., Khot K.V., Patil P.B.,Kharade S. D., Mane R.M., Desai N.D., Hong C.K. Patil P.S., Bhosale P.N. A facile and low cost strategy to synthesize Cd1−xZnxSe thin films for photo electro chemical performance: effect of zinc content. RSC Adv, 2015, 5, P. 55658–55668.
9. Khot K.V., Mali S.S., Pawar N.B., Kharade R.R., Mane R.M., Kondalkar V.V., PatilP.B., Patil P.S., Hong C.K., Kim J.H., Heo J., Bhosale P.N. Development of nanocoral-like Cd(SSe) thin films using an arrested precipitation technique and their application. New J.Chem, 2014, 38, P. 5964–5974.
Review
For citations:
Jagadale S.K., Shinde D.B., Mane R.M., Khot K.V., Ghanwat V.B., Bhosale P.N., Mane R.K. Chemosynthesis, characterization and PEC performance of CdZn(SSe)2 thin films by arrested precipitation technique (APT). Nanosystems: Physics, Chemistry, Mathematics. 2016;7(3):523-527. https://doi.org/10.17586/2220-8054-2016-7-3-523-527
Views:
1
Email this article 