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Surfactant assisted synthesis of nanocrystalline n-Bi2Se3 thin films at room temperature via arrested precipitation technique

https://doi.org/10.17586/2220-8054-2016-7-4-765-767

Abstract

In the present investigation, we have successfully synthesized nanocrystalline bismuth selenide (Bi2Se3) thin films using an arrested precipitation technique at room temperature. The optostructural, morphological, compositional and photoeletrochemical properties were studied for Bi2Se3 thin films prepared via surfactant-assisted synthesis. The optical study reveals the presence of direct allowed transition with band gap energy ranging from 1.40–1.80 eV. The X-ray diffraction (XRD) pattern confirms rhombohedral crystal structure. Scanning electron microscopy study shows the morphological transition from an interconnected mesh to nanosphere-like morphology and finally, lamellar sphere. Atomic force microscopy (AFM) study carried out to determine surface roughness and surface topography of thin films. Energy dispersive spectroscopy (EDS) analysis reveals the presence and ratio of elemental bismuth and selenium. Finally, the photoelectrochemical (PEC) performance of all the as-synthesized thin films were carried out using iodide-polyiodide redox couple.

About the Authors

N. D. Desai
Shivaji University
India

Materials Research Laboratory, Department of Chemistry

Kolhapur–416004



S. M. Patil
Shivaji University
India

Materials Research Laboratory, Department of Chemistry

Kolhapur–416004



K. V. Khot
Shivaji University
India

Materials Research Laboratory, Department of Chemistry

Kolhapur–416004



R. M. Mane
Shivaji University
India

Materials Research Laboratory, Department of Chemistry

Kolhapur–416004



P. N. Bhosale
Shivaji University
India

Materials Research Laboratory, Department of Chemistry

Kolhapur–416004



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Review

For citations:


Desai N.D., Patil S.M., Khot K.V., Mane R.M., Bhosale P.N. Surfactant assisted synthesis of nanocrystalline n-Bi2Se3 thin films at room temperature via arrested precipitation technique. Nanosystems: Physics, Chemistry, Mathematics. 2016;7(4):765-767. https://doi.org/10.17586/2220-8054-2016-7-4-765-767

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ISSN 2220-8054 (Print)
ISSN 2305-7971 (Online)