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Nanostructured SiGe:Sb solid solutions with improved thermoelectric figure of merit

https://doi.org/10.17586/2220-8054-2020-11-6-680-684

Abstract

Thermoelectric Si0.65Ge0.35Sbδ materials have been fabricated by spark plasma sintering of Ge–Si–Sb powder mixtures. The electronic properties of Si0.65Ge0.35Sbδ were found to be dependent on the uniformity of mixing of the components, which in turn is determined by the maximum heating temperature during solid-state sintering. Provided the concentration of donor Sb impurity is optimized the thermoelectric figure of merit for the investigated structures can be as high as 0.63 at 490 C, the latter value is comparable with world-known analogues obtained for Si1−xGexPδ.

About the Authors

M. V. Dorokhin
Lobachevsky State University of Nizhny Novgorod
Russian Federation

Gagarin ave. 23, Nizhniy Novgorod, 603950



P. B. Demina
Lobachevsky State University of Nizhny Novgorod
Russian Federation

Gagarin ave. 23, Nizhniy Novgorod, 603950



Yu. M. Kuznetsov
Lobachevsky State University of Nizhny Novgorod
Russian Federation

Gagarin ave. 23, Nizhniy Novgorod, 603950



I. V. Erofeeva
Lobachevsky State University of Nizhny Novgorod
Russian Federation

Gagarin ave. 23, Nizhniy Novgorod, 603950



A. V. Zdoroveyshchev
Lobachevsky State University of Nizhny Novgorod
Russian Federation

Gagarin ave. 23, Nizhniy Novgorod, 603950



M. S. Boldin
Lobachevsky State University of Nizhny Novgorod
Russian Federation

Gagarin ave. 23, Nizhniy Novgorod, 603950



E. A. Lantsev
Lobachevsky State University of Nizhny Novgorod
Russian Federation

Gagarin ave. 23, Nizhniy Novgorod, 603950



A. A. Popov
Lobachevsky State University of Nizhny Novgorod
Russian Federation

Gagarin ave. 23, Nizhniy Novgorod, 603950



E. А. Uskova
Lobachevsky State University of Nizhny Novgorod
Russian Federation

Gagarin ave. 23, Nizhniy Novgorod, 603950



V. N. Trushin
Lobachevsky State University of Nizhny Novgorod
Russian Federation

Gagarin ave. 23, Nizhniy Novgorod, 603950



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Dorokhin M.V., Demina P.B., Kuznetsov Yu.M., Erofeeva I.V., Zdoroveyshchev A.V., Boldin M.S., Lantsev E.A., Popov A.A., Uskova E.А., Trushin V.N. Nanostructured SiGe:Sb solid solutions with improved thermoelectric figure of merit. Nanosystems: Physics, Chemistry, Mathematics. 2020;11(6):680–684. https://doi.org/10.17586/2220-8054-2020-11-6-680-684

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ISSN 2220-8054 (Print)
ISSN 2305-7971 (Online)