Nanostructured SiGe:Sb solid solutions with improved thermoelectric figure of merit
https://doi.org/10.17586/2220-8054-2020-11-6-680-684
Аннотация
Thermoelectric Si0.65Ge0.35Sbδ materials have been fabricated by spark plasma sintering of Ge–Si–Sb powder mixtures. The electronic properties of Si0.65Ge0.35Sbδ were found to be dependent on the uniformity of mixing of the components, which in turn is determined by the maximum heating temperature during solid-state sintering. Provided the concentration of donor Sb impurity is optimized the thermoelectric figure of merit for the investigated structures can be as high as 0.63 at 490 ◦C, the latter value is comparable with world-known analogues obtained for Si1−xGexPδ.
Об авторах
M. Dorokhin
Lobachevsky State University of Nizhny Novgorod
Россия
Россия
P. Demina
Lobachevsky State University of Nizhny Novgorod
Россия
Россия
Yu. Kuznetsov
Lobachevsky State University of Nizhny Novgorod
Россия
Россия
I. Erofeeva
Lobachevsky State University of Nizhny Novgorod
Россия
Россия
A. Zdoroveyshchev
Lobachevsky State University of Nizhny Novgorod
Россия
Россия
M. Boldin
Lobachevsky State University of Nizhny Novgorod
Россия
Россия
E. Lantsev
Lobachevsky State University of Nizhny Novgorod
Россия
Россия
A. Popov
Lobachevsky State University of Nizhny Novgorod
Россия
Россия
E. Uskova
Lobachevsky State University of Nizhny Novgorod
Россия
Россия
V. Trushin
Lobachevsky State University of Nizhny Novgorod
Россия
Россия
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Для цитирования:
, , , , , , , , , . Наносистемы: физика, химия, математика. 2020;11(6):680–684. https://doi.org/10.17586/2220-8054-2020-11-6-680-684
For citation:
Dorokhin M.V., Demina P.B., Kuznetsov Yu.M., Erofeeva I.V., Zdoroveyshchev A.V., Boldin M.S., Lantsev E.A., Popov A.A., Uskova E.А., Trushin V.N. Nanostructured SiGe:Sb solid solutions with improved thermoelectric figure of merit. Nanosystems: Physics, Chemistry, Mathematics. 2020;11(6):680–684. https://doi.org/10.17586/2220-8054-2020-11-6-680-684
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